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  spp Datasheet PDF File

For spp Found Datasheets File :: 925    Search Time::2.282ms    
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    SPA08N50C3 SPP08N50C3 SPI08N50C3

INFINEON[Infineon Technologies AG]
Part No. SPA08N50C3 spp08N50C3 SPI08N50C3
OCR Text ...tings Parameter Symbol ID Value spp_I SPA Unit Continuous drain current TC = 25 C TC = 100 C A 7.6 4.6 7.61) 4.61) 22.8 230 0.5 7.6 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V ...
Description Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 262.59K  /  13 Page

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    SPA08N80C3 SPP08N80C3

INFINEON[Infineon Technologies AG]
Part No. SPA08N80C3 spp08N80C3
OCR Text ... TC = 25 C TC = 100 C Symbol spp ID 8 5.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 24 340 0.2 8 20 30 104 Value SPA Unit A 81) 5.11) 24 340 0.2 8 20 30 40 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...

File Size 249.57K  /  12 Page

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    SPA17N80C3 SPB17N80C3 SPP17N80C3

INFINEON[Infineon Technologies AG]
Part No. SPA17N80C3 SPB17N80C3 spp17N80C3
OCR Text ...1 670 0.5 17 20 30 208 Value spp_B SPA Unit A 17 1) 11 1) 51 670 0.5 17 20 30 42 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4A, VDD=50V Avalanche energy, repetitive tAR limited by...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 330.70K  /  13 Page

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    Microchip
Part No. RN41NAPL-I/RM543 RN41-I/RM477 RN41-I/RMF477 RN41N-I/RM477 RN41-I/RM615 RN41HCI-I/RM RN41HID-I/RM RN41N-I/RM615 RN41NAPL-I/RM545 RN41SM-I/RM RN41XVU-I/RM
OCR Text ...ed, < 10 ma sniff mode) uart (spp or hci) and usb (hci only) data connection interfaces sustained spp data rates: 240 kbps (slave mode), 300 kbps (master mode) hci data rates: 1.5 mbps sustained, 3.0 mbps burst in hci mode embedded ...
Description Bluetooth Module

File Size 490.86K  /  28 Page

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    Microchip
Part No. RN52-I/RM
OCR Text ...iles: a2dp, avrcp, hfp/hsp and spp audio decoders: sbc, aac, aptx enhanced hands free voice capability narrowband and wideband codecs with cvc dsp software configurable through commands over uart console interface stereo analog diff...
Description Bluetooth Module

File Size 357.33K  /  26 Page

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    Microchip
Part No. RN42HID-I/RM RN42NHID-I/RM RN42XVU-I/RM
OCR Text ...nected, 30 ma transmit) uart (spp or hci) and usb (hci only) data con- nection interfaces sustained spp data rates: 240 kbps (slave mode), 300 kbps (master mode) hci data rates: 1.5 mbps sustained, 3.0 mbps burst in hci mode embedded...
Description Bluetooth Module

File Size 1,050.70K  /  26 Page

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    Microchip
Part No. BM62SPKA1MC2-0001AA
OCR Text ...rts hfp 1.6, hsp 1.2, a2dp 1.3, spp 1.2, avrcp 1.6 supports bluetooth (br/edr/ble) specifications (fw dependent) stand-alone module with on-board pcb antenna and bluetooth stack supports high resolution up to 24-bit, 96 khz audio dat...
Description Bluetooth Module

File Size 2,101.65K  /  70 Page

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    SPA16N50C3 SPB16N50C3 SPI16N50C3 SPP16N50C3

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPA16N50C3 SPB16N50C3 SPI16N50C3 spp16N50C3
OCR Text spp16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Imp...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 359.56K  /  13 Page

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    SPP7001K

SYNC POWER Crop.
Part No. spp7001K
OCR Text ...iption applications the spp 7001k is the p - channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially...
Description P-Channel Enhancement Mode MOSFET

File Size 336.41K  /  7 Page

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For spp Found Datasheets File :: 925    Search Time::2.282ms    
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