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to-247 isowatt218 Datasheet PDF File

For to-247 isowatt218 Found Datasheets File :: 66 Search Time::4.453ms
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				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	STH13NB60FI STH13NB60 STW13NB60
OCR Text	to-247/isowatt218 PowerMESHTM MOSFET TYPE ST W13NB60 ST H13NB60FI s s s s s V DSS 600 V 600 V R DS(on) <0.54 <0.54 ID 13 A 8.6 A TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSI...
Description	N-CHANNEL Power MOS MOSFET N - CHANNEL 600V - 0.48ohm - 13A - to-247/isowatt218 PowerMESH MOSFET N - CHANNEL 600V - 0.48W - 13A - to-247/isowatt218 PowerMESH MOSFET
File Size	110.42K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA40 4872
OCR Text	to-247/isowatt218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW16NA40 STH16NA40FI s s s s s V DSS 400 V 400V R DS(on) < 0.3 < 0.3 ID 16 A 10 A TYPICAL RDS(on) = 0.21 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPET...
Description	N-Channel 400V-0.21Ω-16A - to-247/isowatt218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A to-247/isowatt218功率MOS晶体管（不适用马鞍山沟道功率晶体管 N - CHANNEL 400V - 0.21W - 16A - to-247/isowatt218 POWER MOS TRANSISTORS From old datasheet system N - CHANNEL 400V - 0.21ohm - 16A - to-247/isowatt218 POWER MOS TRANSISTORS
File Size	72.23K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STH9NA60FI STW9NA60
OCR Text	...PICAL RDS(on) = 0.69 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD to-247 1 2 3 2 1 3 ISOWATT21...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
File Size	123.36K / 10 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
Part No.	STH9NA80 STH9NA80FI STW9NA80
OCR Text	to-247/isowatt218 FAST POWER MOS TRANSISTOR TYPE STW 9NA80 STH9NA80FI s s s s s s s V DSS 800 V 800 V R DS(on) < 1.0 < 1.0 ID 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPET...
Description	N - CHANNEL 800V - 0.85ohm - 9.1A - to-247/isowatt218 FAST POWER MOS TRANSISTOR N-Channel 800V-0.85Ω-9.1A - to-247/isowatt218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
File Size	130.83K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STGW39NC60VD GW39NC60VD
OCR Text	to-247 Very Fast PowerMESHTM IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGW39NC60VD Figure 1: Package IC @100C 40 A VCES VCE(sat) (Max) @25C 600V < 2.5 V HIGH CURRENT CAPABILITY HIGH FREQUENCY OPER...
Description	N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH IGBT N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH⑩ IGBT
File Size	116.09K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	BU941ZP BU941ZPFI BU941ZP08
OCR Text	...gedness electronic ignitions to-247 Figure 1. TO-3PF Description The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive enviro...
Description	High voltage ignition coil driver NPN power Darlington transistors
File Size	459.17K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	W60N10
OCR Text	... 0.025 ID 60 A 36 A 60 A to-247 TYPICAL RDS(on) = 0.02 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIE...
Description	Search --To STW60N10
File Size	278.64K / 11 Page	View it Online	Download Datasheet

For to-247 isowatt218 Found Datasheets File :: 66 Search Time::4.453ms
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