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Mitsubishi Electric Corporation
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| Part No. |
CM20MD1-12H
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| OCR Text |
...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 2.0 1.5 0.4 120 300 200 3... |
| Description |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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| File Size |
165.34K /
5 Page |
 View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
CM15MD1-12H
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| OCR Text |
...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 1.5 1.2 0.3 120 300 200 3... |
| Description |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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| File Size |
167.94K /
5 Page |
View
it Online |
Download Datasheet |
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|
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Mitsubishi Electric Corporation
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| Part No. |
CM15MD-24H
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| OCR Text |
...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 3.4 3.0 2.4 0.6 100 200 150 3... |
| Description |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
166.94K /
5 Page |
View
it Online |
Download Datasheet |
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|
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Mitsubishi Electric Corporation
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| Part No. |
CM10MD1-12H
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| OCR Text |
...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 1.0 0.9 0.2 120 300 200 3... |
| Description |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
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| File Size |
156.61K /
5 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK9C10-65BIT BUK9C10-65BIT-15
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| OCR Text |
... capacitance - 194 - pf t d(on) turn-on delay time v ds =30v; r l =1.5 ? ; v gs =5v; r g(ext) =10 ? -40-ns t r rise time - 113 - ns t d(off) turn-off delay time - 193 - ns t f fall time - 108 - ns l d internal drain inductance from pin to... |
| Description |
N-channel TrenchPLUS logic level FET
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| File Size |
168.20K /
15 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
Philips
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| Part No. |
BUK753R1-40B BUK763R1-40B
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| OCR Text |
...apacitance - 530 722 pf t d(on) turn-on delay time v dd = 30 v; r l = 1.2 w ; v gs =10v; r g =10 w -38-ns t r rise time - 82 - ns t d(off) turn-off delay time - 141 - ns t f fall time - 90 - ns l d internal drain inductance from drain lead ... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 40V的五（巴西）直| 75A条（丁）|63AB
TrenchMOS(TM) standard level FET
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| File Size |
125.89K /
15 Page |
View
it Online |
Download Datasheet |
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