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vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273 Search Time::1.985ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-2HK QM150DY-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conduc...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.06K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-2H QM150DY-2HBK QM150
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=150A, IB1=0.3A, -IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	82.95K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-HBK QM150DY-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=0.2A -IC=150A (diode forward voltage) IC=150A...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	87.83K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-H QM150DY-HK
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A -IC=150A (diode forward voltage ) IC=150A,...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	77.60K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150HY-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=150A, IB1=-IB2=3A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	69.76K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150HY-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A -IC=150A (diode forward voltage) IC=150A, ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	78.24K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150 QM150CY-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A -IC=150A (diode forward voltage) IC=150A, ...
Description	CAP CER .47UF 250V X7R 10% 1812 HIGH POWER SWITCHING USE INSULATED TYPE
File Size	74.02K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM15DX-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=15A, IB1=-IB2=0.3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Condu...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	67.71K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM15DX-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=0.3A -IC=15A (diode forward voltage) IC=15A, V...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	66.61K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM15KD-HB QM15
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=60mA -IC=15A (diode forward voltage) IC=15A, V...
Description	15 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
File Size	88.46K / 6 Page	View it Online	Download Datasheet

For vceo-600v Found Datasheets File :: 273 Search Time::1.985ms
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