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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...ty * Self-refresh capability (L-ver only) * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early Write or output enable controlled write * JEDEC Standard pinout * Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages *...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text	...CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.) * Single 5.0V10% Power Supply * TTL Compatible Inputs and Outputs * I/O Compatible with 3.3V Device * Fully...
Description	32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM
File Size	180.35K / 9 Page	View it Online	Download Datasheet

				Elpida Memory, Inc. ELPIDA MEMORY INC
Part No.	EDR2518ABSE-8C EDR2518ABSE-8C-E EDR2518ABSE-AD-E EDR2518ABSE-AE-E EDR2518ABSE-AEP-E
OCR Text	ver. 4.0) date published april 2003 (k) japan url: http://www.elpida.com ? elpida memory, inc. 2002-2003 preliminary data sheet 288m bits direct rambus ? ? ? ? dram edr2518abse (512k words 18 bits 32s banks) ...
Description	CHOKE RF HI CURRENT 150UH 10% Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No 288M bits Direct Rambus DRAM 16M X 18 DIRECT RAMBUS DRAM, PBGA80
File Size	1,109.43K / 79 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681002CI-20 KM681002CJ-10 KM681002CJ-12 KM681002CJ-15 KM681002CJ-20 KM681002CL KM681002CL-10 KM681002CL-12 KM681002CL-15 KM681002CL-20 KM681002CLI KM681002CLI-10 KM681002CLI-12 KM681002CLI-15 KM681002CLI-20 KM681002CT-20 KM681002CLJ-10 KM681002CLJ-12 KM681002CLJ-15 KM681002CLJ-20 KM681002CLT-10 KM681002CLT-12 KM681002CLT-15 KM681002CLT-20 KM681002CT-10 KM681002CT-12 KM681002CT-15 KM681002CJ-20000 KM681002CJI-2000 KM681002CT-10000
OCR Text	...CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating KM681002C/CL-10 : 80mA(Max.) KM681002C/CL-12 : 75mA(Max.) KM681002C/CL-15 : 73mA(Max.) KM681002C/CL-20 : 70mA(Max.) * Single 5.0V10% Power Supply * TTL Compatible Inputs and Outputs * I/O ...
Description	128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K X 8 STANDARD SRAM, 10 ns, PDSO32
File Size	197.74K / 9 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SP3906
OCR Text	...e temperature range t j , t stg ver 1.0 www.samhop.com.tw sep,11,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product 4 1.6 e as sing...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	104.05K / 7 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPP2327
OCR Text	ver.1 page 1 spp2327 p-channel enhancement mode mosfet description applications the spp2327 is the p-channel logic enhancement mode power field effect transistor which is produced using super high cell dens...
Description	P-Channel Enhancement Mode MOSFET
File Size	203.91K / 6 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SP3900
OCR Text	...mj 1.47 s1 g1 s2 g2 d1 d1 d2 d2 ver 1.1 dfn 3x3 pin1 symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) v 34 g fs s c iss 380 pf c oss 63 pf c rss 46 pf q g 11 nc 11 17 4.6 t d(on) 6 ns t r ns t d(off) ns t f ns v ds =10v,v gs =...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	108.83K / 7 Page	View it Online	Download Datasheet

				Elpida Memory, Inc.
Part No.	EDS1232CASE-1A-E EDS1232CASE-1AL-E
OCR Text	ver. 3.0) date published october 2004 (k) japan url: http://www.elpida.com ? elpida memory, inc. 2003-2004 data sheet 128m bits sdram eds1232case (4m words 32 bits) description the eds1232case is a 128m bits sdram organ...
Description	ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
File Size	708.18K / 53 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPM3512A
OCR Text	ver. 1.0 Dedicated Pin INPUT/GCLK1 INPUT/GCLRn INPUT/OE1 INPUT/OE2/GCLK2 TDI (1) TMS (1) TCK (1) TDO (1) GNDINT GNDIO 208-Pin PQFP 184 182 183 181 176 127 30 189 75, 82, 180, 185 6, 14, 32, 40, 50, 51, 72, 84, 94, 108, 116, 134, 152, 158, 1...
Description	EPM3512A Dedicated Pin-Outs EPM3512A Dedicated Pin-Outs
File Size	40.61K / 12 Page	View it Online	Download Datasheet

				Elpida Memory, Inc. DRAM
Part No.	EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E EDX5116ABSE-2A-E EDX5116ABSE-4C-E
OCR Text	ver. 3.0) date published august 2005 (k) japan printed in japan url: http://www.elpida.com ? elpida memory, inc. 2005 overview the edx5116abse is a 512m bits xdr ? dram organized as 32m words 16 bits. it is a general-purpose high-...
Description	512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
File Size	3,549.24K / 78 Page	View it Online	Download Datasheet

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