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  w charge Datasheet PDF File

For w charge Found Datasheets File :: 69164    Search Time::1.875ms    
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    SIR496DP-T1-GE3

Vishay Siliconix
Part No. SIR496DP-T1-GE3
OCR Text ...steady state conditions is 70 c/w. g. package limited. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol lim...charge q g v ds = 10 v, v gs = 10 v, i d = 10 a 28 42 nc v ds = 10 v, v gs = 4.5 v, i d = 10 ...
Description N-Channel 20 V (D-S) MOSFET

File Size 481.87K  /  13 Page

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    SIS434DN SIS434DN-T1-GE3

Vishay Siliconix
Part No. SIS434DN SIS434DN-T1-GE3
OCR Text ...steady state conditions is 81 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source v...charge q g v ds = 20 v, v gs = 10 v, i d = 16.2 a 25 40 nc v ds = 20 v, v gs = 4.5 v, i d = ...
Description N-Channel 40-V (D-S) MOSFET

File Size 562.52K  /  13 Page

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    Renesas
Part No. RJK6012DPP
OCR Text ...el dissipation pch note2 30 w channel to case thermal impedance ? ch-c 4.17 ?c/w channel temperature tch 150 ?c storage temperat...charge qg ? 30 ? nc gate to source charge qgs ? 6.5 ? nc gate to drain charge qgd ? 1...
Description N-Channel Power MOSFET

File Size 149.71K  /  7 Page

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    Renesas
Part No. RJK6012DPE
OCR Text ...l dissipation pch note2 100 w channel to case thermal impedance ? ch-c 1.25 ?c/w channel temperature tch 150 ?c storage temperat...charge qg ? 30 ? nc gate to source charge qgs ? 6.5 ? nc gate to drain charge qgd ? 1...
Description N-Channel Power MOSFET

File Size 137.51K  /  7 Page

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    Renesas
Part No. RJH60D0DPM
OCR Text ...or dissipation p c note2 40 w junction to case the rmal resistance (igbt) ? j-c note2 3.13 c/ w junction to case thermal resistan...charge qg ? 46 ? nc gate to emitter charge qge ? 8 ? nc gate to collector charge qgc ?...
Description IGBT

File Size 160.30K  /  10 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... -40 to +125 Units V A V w C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - I...charge (turn-on) Gate - Emitter charge (turn-on) Gate - Collector charge (turn-on) Turn-On Delay Tim...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... -40 to +125 Units V A V w C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - I...charge (turn-on) Gate - Emitter charge (turn-on) Gate - Collector charge (turn-on) Turn-On Delay Tim...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... -40 to +125 Units V A V w C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - I...charge (turn-on) Gate - Emitter charge (turn-on) Gate - Collector charge (turn-on) Turn-On Delay Tim...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... -40 to +125 Units V A V w C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - I...charge (turn-on) Gate - Emitter charge (turn-on) Gate - Collector charge (turn-on) Turn-On Delay Tim...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    FGH80N60FD2

Fairchild Semiconductor
Part No. FGH80N60FD2
OCR Text ...tion @ t c = 25?c 290 w maximum power dissipation @ t c = 100 ?c 116 w t j operating junction temperature -55 to +150 ?c t stg...charge v ce = 400 v, i c = 40 a, v ge = 15 v -- 120 -- nc q ge gate-emitte...
Description 600V, Field Stop IGBT

File Size 605.96K  /  9 Page

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