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80C188XL 80C188XL 05002 HDBS103G DTC114YD E470M SB105 210N2
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    HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD532646A6-M HYMD532646AL6-H HYMD532646AL6-K HYMD532646AL6-L HYMD532646AL

Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
Part No. hYMD532646A6-h hYMD532646A6-K hYMD532646A6-L hYMD532646A6-M hYMD532646AL6-h hYMD532646AL6-K hYMD532646AL6-L hYMD532646AL6-M
OCR Text ...ng o o Unit C C V V V mA w o C Sec Note : Operation at above absolute maximum rating can adversely affect device reliability ...h/L AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Referenc...
Description DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184

File Size 272.51K  /  16 Page

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    HYMD116G725B8-H HYMD116G725B8-K HYMD116G725B8-L HYMD116G725B8-M HYMD116G725BL8-H HYMD116G725BL8-K HYMD116G725BL8-L HYMD1

Hynix Semiconductor
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Part No. hYMD116G725B8-h hYMD116G725B8-K hYMD116G725B8-L hYMD116G725B8-M hYMD116G725BL8-h hYMD116G725BL8-K hYMD116G725BL8-L hYMD116G725BL8-M
OCR Text ... BA0-BA1 A0-A11 /RAS /CAS CKE0 /w E PCK /PCK CK0, /CK0 --------- PLL* * w ire per clock loading table/wiring diagram s /RCS0 -->/S0 : SDRAM ...h/L ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin ...
Description Registered DDR SDRAM DIMM

File Size 248.65K  /  17 Page

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    TPC8040-H

Toshiba Semiconductor
Part No. TPC8040-h
OCR Text ...tion weight: 0.085 g (typ.) w Drain power dissipation 1.0 w Circuit Configuration 8 7 6 5 Single pulse avalanche energy ...h Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?h)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-h)

File Size 218.07K  /  7 Page

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    STF26NM60N-H

意法半导
STMicroelectronics
Part No. STF26NM60N-h
OCR Text ...0 25 20 (1) Unit V V A A A w 12.6 (1) 80 (1) PTOT dv/dt (3) VISO Tstg Tj 30 0.24 Peak diode recovery voltage slope Insulat...h 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(B...
Description Low gate input resistance

File Size 678.92K  /  12 Page

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    STGIPS30C60T-H

STMicroelectronics
Part No. STGIPS30C60T-h
OCR Text ... logic input for v phase 11 out w high-side reference output for w phase 12 v boot w bootstrap voltage for w phase 13 lin w low-side logic input for w phase 14 hin w high-side logic input for w phase 15 sd shutdown logic input (active low...
Description Undervoltage lockout

File Size 686.48K  /  19 Page

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    UT7422-H

Unisonic Technologies
Part No. UT7422-h
OCR Text ...tion (note 3) t c =25c p d 36 w power dissipation (note 2) t a =25c p dsm 3.1 w junction temperature t j -55~+150 c storage tempera...h ...
Description N-ChANNEL MOSFET

File Size 255.22K  /  7 Page

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    HYMD264726CL8-H HYMD264726CL8-K HYMD264726CL8-L HYMD264726CL8-M HYMD264726C8-L HYMD264726C8-M HYMD264726C8-H HYMD264726B

Hynix Semiconductor
Part No. hYMD264726CL8-h hYMD264726CL8-K hYMD264726CL8-L hYMD264726CL8-M hYMD264726C8-L hYMD264726C8-M hYMD264726C8-h hYMD264726BL8J-J hYMD264726C8-K hYMD264726C8J-J
OCR Text ...P SA0 SA1 SA2 Clock w iring Clock Input *CK0,/CK0 *CK1,/CK1 *CK2,/CK2 SDRAMs 6 SDRAMs 6 SDRAMs 6 SDRAMs VDDSPD . VREF VSS ...h/L ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin ...
Description Unbuffered DDR SDRAM DIMM

File Size 194.11K  /  16 Page

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    HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HYMD232726CL8-M HYMD232726C8-M HYMD232726C8-L HYMD232726C8-H HYMD232726C

HYNIX SEMICONDUCTOR INC
Part No. hYMD232726CL8-h hYMD232726CL8-K hYMD232726CL8-L hYMD232726CL8-M hYMD232726C8-M hYMD232726C8-L hYMD232726C8-h hYMD232726C8-K
OCR Text ... 1,/C K 1 *C K 2,/C K 2 *C lock w iring SD R A M s 3 SDRAM s 3 SDRAM s 3 SDRAM s D8 * w ire p er clock lo ad ing tab le/wiring d iagra...h/L ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin ...
Description DDR SDRAM - Unbuffered DIMM 256MB
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
Unbuffered DDR SDRAM DIMM

File Size 153.34K  /  16 Page

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    TPC8017-H

Toshiba Semiconductor
Part No. TPC8017-h
OCR Text ...) Drain power dissipation w weight: 0.080 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.0 w Circuit Config...h Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note ...
Description Field Effect Transistor

File Size 317.36K  /  7 Page

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    TPCA8006-H

Toshiba Semiconductor
Part No. TPCA8006-h
OCR Text www.DataSheet4U.com TENTATIVE TPCA8006-h TOShIBA Field Effect Transistor Silicon N Channel MOS Type (I -MOSVII) TPCA8006-h 0.50.1 Switching Regulator Applications Motor Drive Applications 6.00.3 Unit: mm 1.27 8 0.40.1 5...
Description TOShIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 63.15K  /  4 Page

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