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Omnirel
NEC, Corp.
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| Part No. |
2N6770 JANTX2N6764
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| OCR Text |
...9500/543
100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor
FEATURES
* Low RDS(on) * Ease of Paralleling * Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the l... |
| Description |
500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N沟道，增强模式功率MOS场效应管)
100V, 38A, N-Channel, Enhancement Mode Power MOSFET(100V, 38A,N沟道，增强模式MOS功率场效应管) 100V的，38A条，N沟道，增强模式功率MOSFET00V的，38A条，沟道，增强模式马鞍山功率场效应管
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| File Size |
62.43K /
5 Page |
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GE[General Semiconductor]
N.A.
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| Part No. |
GFB75N03
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| OCR Text |
...= 0V, ID = 250A VGS = 10V, ID = 38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS 5V, VGS = 10V VDS = 15V, ID = 38A
30 - - 1.0 - - 75 -
- 5.8 8.5 - - - - 61
- 6.5 9.5 3.0 1.0 100 - -
V m ... |
| Description |
N-channel Enhancement-mode MOSFET
TRANSISTOR|MOSFET|N-CHANNEL|30VV(BR)DSS|75AI(D)|TO-263AB
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| File Size |
98.61K /
5 Page |
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IRF[International Rectifier]
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| Part No. |
FA38SA50LC
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| OCR Text |
...00V RDS(on) = 0.13
G
ID = 38A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes... |
| Description |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
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| File Size |
167.34K /
8 Page |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
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| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
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| OCR Text |
38A
B2LL
APT8020B2LL APT8020LLL
0.200
POWER MOS 7
(R)
R
MOSFET
T-MAXTM
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are a... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
156.54K /
5 Page |
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it Online |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB6676S FDP6676S FDB6676SS62Z
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| OCR Text |
...35 A VGS = 4.5 V, VGS=10 V, ID =38A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 38 A
1
1.3 -8.4 4.7 5.2 7.3
3
V mV/C
6.5 8.0 11
m
ID(on) gFS
60 145
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacit... |
| Description |
76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM
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| File Size |
110.15K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020LFLL APT8020B2FLL
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| OCR Text |
38A 0.220
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by signi... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
244.54K /
5 Page |
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it Online |
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Crouzet North America
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| Part No. |
DR4110 DR7110 DR7111 DR4111
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| OCR Text |
...c 90-250vac 8ma dr24120 two 45a 38a 48-660vac 4-32vdc 10ma dr24121 two 45a 38a 48-660vac 90-250vac 8ma dr34120 three 30a 25a 48-660vac 4-32vdc 10ma dr34121 three 30a 25a 48-660vac 90-250vac 8ma ip20 touch-safe housing dr7110 single 16a 14a ... |
| Description |
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| File Size |
334.68K /
2 Page |
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it Online |
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Price and Availability
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