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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
...C=25C
Value 80 80 320 450 21.5 6 20 215 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25C
ID puls EAS EAR dv/dt VG...08 SPP80N06S2-08,SPB80N06S2-08 Thermal Characteristics Parameter Characteristics Thermal resistance,... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPU30N03S2-08
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| OCR Text |
...8
-
7.9 14.1 35 4.7
10.5 21.1 47 -
nC
V(plateau) VDD =24V, ID =30A
V
Reverse Diode Inverse diode continuous forward cur...08
1 Power dissipation Ptot = f (TC) parameter: VGS 6 V
140
SPU30N03S2-08
2 Drain current ID =... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 8.2mOhm, 30A, NL
OptiMOS Power-Transistor
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| File Size |
256.65K /
8 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD40N02-08
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| OCR Text |
...
VDS = VGS, ID = 250 A VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 20 A
V A 0.0068 0.0104 0.011 1.2 V
Drain-Source On-State Resistanc...08
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED)
Docu... |
| Description |
N-Channel 20-V (D-S), 175C MOSFET
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| File Size |
177.58K /
3 Page |
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it Online |
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Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUP85N08-08 SUB85N08-08
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| OCR Text |
...RthJC
Symbol
Limit
40 62.5 0.6
Unit
_C/W
2-1
SUP/SUB85N08-08
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-B... |
| Description |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V（下副秘书长175度Celcious MOSFET
N-Channel 75-V (D-S) 175C MOSFET N通道75 - V（下副秘书长75荤MOSFET
N-Channel MOSFET
N-Channel 75-V (D-S) 175C MOSFET
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| File Size |
59.29K /
5 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
TGF2021-08
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| OCR Text |
...aximum Gain (dB)
25 20 15 10 5 0 0 2 4
MSG
MAG
6
8
10
12
14
16
Frequency (GHz)
Note: This device is early i...08
Value
12.5 V -5V to 0V 3.8 A 56 mA 34 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
... |
| Description |
DC - 12 GHz Discrete power pHEMT
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| File Size |
139.27K /
8 Page |
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it Online |
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TELEDYNE[Teledyne Technologies Incorporated]
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| Part No. |
TGM-08-2005 TGM-08-2004
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| OCR Text |
...-0.011 dB Noise Figure (max): 2.5 dB 14 dBm Output Power @ 1dB Compression: Gain Flatness Vs Frequency: 5 dB Slope 3rd Order Intercept (Typ)...08/05
TGM-08-2005
Module Amplifier
2 GHz - 8 GHz
TELEDYNE MICROWAVE
ISO 9001:2000
... |
| Description |
Module Amplifier 2 GHz - 8 GHz
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| File Size |
905.86K /
2 Page |
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it Online |
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Price and Availability
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