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WINGS[Wing Shing Computer Components]
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Part No. |
2SD880
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OCR Text |
...
Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 5V , IC=0.5A VCE= 5V , IC=3A IC=3A , IB=0.3A VCE= 5V , IC=0.5A
Min
Typ
Max 100 100 300
Unit
A A
60 20 0.4 3
1.0
V MHZ
Wing Shing Computer Components Co., (H.K)Lt... |
Description |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
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File Size |
27.27K /
1 Page |
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UTC[Unisonic Technologies]
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Part No. |
2SD879
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OCR Text |
...
TEST CONDITIONS
IC=10uA, IE=0 IC=1mA, VBE=3V IC=1mA, RBE= IE=10uA, IC=0 VCE=-1V,IC=-2A VCB=20V,IE=0 VEB=4V,Ic=0 VCE=2V, Ic=3A (pulse) Ic=3A,IB=60mA (pulse) VCE=10V, Ic=50mA VCB=10V,f=1MHz
MIN
30 20 10 6
TYP
MAX
UNIT
V V V ... |
Description |
1.5V, 3V STROBE APPLICATIONS
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File Size |
87.32K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
2SD875 2SD0875
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OCR Text |
...ng and the magazine packing.
1 0.40.08 1.50.1 3
0.4 max. 2.60.1
Unit: mm
4.50.1 1.60.2 1.50.1
4.0+0.25 -0.20
2.50.1
1.0+0.1 -0.2
3 2 0.50.08
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter ... |
Description |
For Low-Frequency Power Amplification
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File Size |
67.17K /
3 Page |
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http:// WINGS[Wing Shing Computer Components]
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Part No. |
2SD870
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OCR Text |
...
MIN
Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.0A ICsat = 4.0A; f = 16KHz
-
MAX 1500 600 5 50 5 2 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter ... |
Description |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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File Size |
190.94K /
1 Page |
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http:// WINGS[Wing Shing Computer Components]
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Part No. |
2SD850
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OCR Text |
...
TYP
Tmb 25 IC = 3.0A; IB = 0.8A f = 16KHz ICsat = 3.0A; f = 16KHz
-
MAX 1500 600 3 6 40 5 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage pe... |
Description |
Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
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File Size |
188.09K /
1 Page |
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ROHM[Rohm]
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Part No. |
2SB1565
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OCR Text |
...sions (Unit : mm)
TO-220FN
10.0
4.5
3.2
2.8
14.0
Features 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA.
(1)Base (2)Collector (3)Emitter
15.0
12.0
8.0 5.0
1.2
1.3
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Description |
Power Transistor (-60V, -3A)
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File Size |
45.67K /
2 Page |
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ROHM[Rohm]
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Part No. |
2SB1566
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OCR Text |
...sions (Unit : mm)
TO-220FN
10.0
4.5
3.2
2.8
Features 1) Low VCE (sat). 2) Wide SOA.
15.0
12.0
8.0 5.0
1.2
1.3
14.0
0.8
(1)Base (2)Collector (3)Emitter
2.54
(1) (2) (3)
2.54
0.75
2.6
Applicatio... |
Description |
For Power Amplification (-60V, -3A)
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File Size |
45.58K /
2 Page |
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ROHM[Rohm]
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Part No. |
2SB1568
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OCR Text |
...rnal dimensions (Unit : mm)
10.0 3.2
4.5 2.8
15.0
12.0
8.0 5.0
1.2
1.3
14.0
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
ROHM : TO-220FN
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Sourse)
Applications P... |
Description |
Power Transistor (−80V, −4A) Power Transistor (-80V, -4A)
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File Size |
66.52K /
4 Page |
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SANKEN[Sanken electric]
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Part No. |
2SB1588
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OCR Text |
0 ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1588 -160 -150 -5 -10 -1 80(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C
2SB1588
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO ... |
Description |
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)
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File Size |
24.72K /
1 Page |
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ROHM[Rohm]
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Part No. |
2SB1590K
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OCR Text |
0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K.
External dimensions (Unit : mm)
SMT3
2.9 0.4
(3)
1.1 0.8
0.95 0.95
Type Package hFE Marking Code Basic ordering unit (pieces)
2SB1590K SMT3 Q... |
Description |
Power Transistor (-15V, -1A)
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File Size |
60.54K /
3 Page |
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Price and Availability
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