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Samsung Semiconductor Co., Ltd.
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| Part No. |
2SK3600-01SJ 2SK3600-01L
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| OCR Text |
... voltage v gs (th) v ds =v gs 3.0 - 5.0 v zero gate voltage v ds =100v vgs=0v t ch =25 c- - 25 drain current i dss vds=80v v gs =0v t ch =1...133a 15 soldering heat immersion time : 101sec test code 1-a ir-ray reflowing mechanical test method... |
| Description |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
STD MOSFET 性病MOSFET
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| File Size |
313.08K /
22 Page |
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it Online |
Download Datasheet
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Infineon Technologies AG
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| Part No. |
SPB100N08S2-07-E6327
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| OCR Text |
...ance, junction - case r thjc - 0.3 0.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min...133a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos... |
| Description |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PLASTIC, TO-263, 3 PIN
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| File Size |
571.56K /
8 Page |
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it Online |
Download Datasheet |
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