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				Advanced Power Technology
Part No.	APT8014JFLL
OCR Text	0.140W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power...3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JLL
OCR Text	0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.73K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2FLL
OCR Text	0.140W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po...3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2LL
OCR Text	0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.58K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018 APT8018L2VR APT8018JN
OCR Text	0.180W POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology ...3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteris...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.92K / 2 Page	View it Online	Download Datasheet

				Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
Part No.	FGC6000AX-120DS
OCR Text	...Dimensions in mm 1 87 +0.2 24-4.5 0 0 .3 (15.0 0.5) 200 0.5 130 0.2 q ITQRM Repetitive controllable on-state current ....3200 Conditions VDM = 5500V, VD = 3000V, LC = 0.3H, VRG = 20V diGQ/dt = 10000A/s, Tj = 25/125C (see ...
Description	HIGH POWER INVERTER USE PRESS PACK TYPE
File Size	30.03K / 2 Page	View it Online	Download Datasheet

				Sharp Corporation SHARP[Sharp Electrionic Components]
Part No.	LZ2346
OCR Text	... VIEW LZ2346 is 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices) driven by ...3200 K / IR cut-off filter (CM-500, 1 mmt)) PARAMHER Photo response non-uniformity Saturation sign...
Description	Twopower supply ( 5 V and 12 V) operation CCIR 1/3 type B/W CCD Area Sensor for CCIR
File Size	182.45K / 8 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] VishaySiliconix Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
Part No.	200D318X0006A1 202D318X0006A1 202D318X9006A1 200D 200D318X9006A1
OCR Text	...eters] Series "A" Case 1.305 0.031 [33.15 0.79] 90 1 1.000 0.062 [25.4 1.57] Series "B" Case C L 0.720 0.031 [18.29 0.79] ...3200.0 A4 200D328X0015A4 202D328X0015A4 0.13 2.1 3300.0 B1 -- 202D338X0015B1 0.14 3.2 4300.0 A5 200D...
Description	Wet Tantalum Capacitors Wet Sintered Anode TANTALEX TANTAPAK Capacitor Assemblies WetTantalumCapacitorsWetSinteredAnodeTANTALEXTANTAPAKCapacitorAssemblies DB25 RJ45,8 WIRE,FEMALEMODUL DB25 RJ45,8 WIRE,MALE MODULA DB25 RJ45,8 WIRE,FEMALEMODUL 液体钽电容器烧结湿电容器阳极TANTALEX TANTAPAK大会
File Size	573.14K / 9 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD28MSP02 AD28MSP02BN AD28MSP02BR AD28MSP02KN AD28MSP02KR
OCR Text	...R and THD. A sampling rate of 8.0 kHz coupled with 65 dB SNR + THD performance make the AD28msp02 attractive in many telecom and speech proc...3200 3800 4400 5000 FREQUENCY - Hz Figure 3. High-Pass Filter Frequency Response F...
Description	Voiceband Signal Port
File Size	313.60K / 20 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DFM800NXM33-A000
OCR Text	...70C Tcase = 115C, tp = 1ms VR = 0, tp = 10ms, Tvj = 125C Tcase = 25C, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC12...3200 2800 2400 2000 1600 1200 800 200 1000 DC forward current, IF - (A) Power Dissipation - Pto...
Description	Fast Recovery Diode Module Preliminary Information
File Size	132.19K / 7 Page	View it Online	Download Datasheet

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