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  0.79m Datasheet PDF File

For 0.79m Found Datasheets File :: 39    Search Time::1.531ms    
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    SUMIDA CORP
Part No. RCH109-151KB RCR1010NP151MB RCR1010NP390MB RCR1010-150MB
OCR Text 0 2 1 power inductors < pin t ype > ?10 series dimensions (mm) construction connection rch-106 ( 1.0 h - 1.0mh ) ( 1.0 h - 7.8 h ) ( ...79m 87m 99m 130m 140m 160m 210m 240m 320m 350m 450m 610m 690m 780m 1.00 1.20 1.40 1.80 2.10 7.90 7.2...
Description 2 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR

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    SUMIDA CORP
Part No. CDRH129HF-6R8NC CDRH129HF-152MC CDRH129HF-122MB CDRH129HF-101MC CDRH129HF-102MC
OCR Text ....2mh. q rated current range: 0.43 11.6 a. q custom design is available. feature q magnetically shielded construction. q storage...79m) 2.62(3.28) 1.98(2.48) 2.60(2.9 0) cdrh129hf-101m 101 10020% 0.126(0.101) 2.31(2.89) ...
Description 1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD

File Size 151.20K  /  3 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4486
OCR Text ...eter typ max avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =70c c/w c/w 59 40 a i d 10 a 14 c/w w r q ja v drain-source voltage 100 31 24 maximum junction-to-ambient a t a =25c 3.1 maximum junction-to-lea...
Description 100V N-Channel MOSFET

File Size 359.42K  /  6 Page

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    AO4486

Alpha & Omega Semiconductors
Part No. AO4486
OCR Text ...eter typ max avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =70c c/w c/w 59 40 a i d 10 a 14 c/w w r q ja v drain-source voltage 100 31 24 maximum junction-to-ambient a t a =25c 3.1 maximum junction-to-lea...
Description 100V N-Channel MOSFET

File Size 543.92K  /  6 Page

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    UPA2690T1R

Renesas Electronics Corporation
Part No. UPA2690T1R
OCR Text ... max. (v gs = 4.5 v, i d = 2.0 a) ? r ds (on)2 = 62 m max. (v gs = 2.5 v, i d = 2.0 a) p-channel ? r ds (on)1 = 79 m max. (v gs = ? 4.5 v, i d = ? 1.5 a) ? r ds (on)2 = 105 m max. (v gs = ? 2.5 v, i d = ? 1.5...
Description COMPLEMENTARY MOSFET Low on-state resistance

File Size 311.47K  /  11 Page

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    MTDA0N10J3

Cystech Electonics Corp.
Part No. MTDA0N10J3
OCR Text ... package shipping mtda0n10j3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel ...79m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =12a ...
Description N -Channel Enhancement Mode Power MOSFET

File Size 263.96K  /  9 Page

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    MTP2301V3

Cystech Electonics Corp.
Part No. MTP2301V3
OCR Text ...ion w p d ta=70 0.88 (note) operating junction and storage temp erature range tj ; tstg -55~+150 c cystech electronics corp. spec. no. : c322v3 issued date : 2012.07.18 revised date : page no. : ...
Description -20V P-CHANNEL Enhancement Mode MOSFET

File Size 327.58K  /  9 Page

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    AON6484

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AON6484
OCR Text ...sipation a p dsm w t a =70c 25.0 1.3 t a =25c power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c 2.7 v c i dsm a t a =70c continuous drain current 10 3.3 a 14 v 20 gate-source voltage drain-source voltage 100 c/w ...
Description 100V N-Channel MOSFET

File Size 355.72K  /  6 Page

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    shenzhen wanhexing Electronics Co.,Ltd
Part No. AO4486
OCR Text ...eter typ max avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =70c c/w c/w 59 40 a i d 10 a 1 4 c/w w r q j a v drain-source voltage 100 31 24 maximum junction-to-ambient a t a =25c 3 .1 maximum junction-t...
Description 100V N-Channel MOSFET

File Size 2,752.99K  /  6 Page

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