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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPP2303S23RG SPP2303
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| OCR Text |
...ge. FEATURES -30V/-2.6A,RDS(ON)=130m@VGS=- 10V -30V/-2.0A,RDS(ON)=180m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) E...rl=15 ID-1.0A,VGEN=-10V RG=6
9 18 6
2007/02/20 Ver.5
Page 3
SPP2303
P-Channel Enhanceme... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
197.27K /
8 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST2303
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| OCR Text |
...
FEATURE
-30V/-2.6A, RDS(ON) = 130m-ohm
D G
1
1.Gate 2.Source
S
2
3.Drain
@VGS = -10V -30V/-2.0A, RDS(ON) = 180m-ohm @VGS = -4...rl=15[ ID=-1.0A,VGEN=-10V RG=6[
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 U... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
76.53K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
TN3019A_00 TN3019A
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| OCR Text |
...nt er med iate B ox
530m m x 130m m x 83mm Inter med iate box
Cus tomized Label
FSCINT Labe l 7,500 un its m axim um per interm edi at e box for st d opt ion
(c)2000 Fairchild Semiconductor International
October 1999, Rev. A1... |
| Description |
NPN General Purpose Amplifier
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| File Size |
398.51K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
TN6729A_00 NZT6729 TN6729A
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| OCR Text |
...nt er med iate B ox
530m m x 130m m x 83mm Inter med iate box
Cus tomized Label
FSCINT Labe l 7,500 un its m axim um per interm edi at e box for st d opt ion
(c)2000 Fairchild Semiconductor International
October 1999, Rev. A1... |
| Description |
PNP General Purpose Amplifier
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| File Size |
558.26K /
12 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2301CX TSM2301
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| OCR Text |
...n), Vgs @ - 4.5V, Ids @ - 2.8A =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m
Features
Advanced trench process technology High density...rl = 6, ID = - 1A, VGEN = - 4.5V, RG = 6 VDS = - 6V, ID = - 2.8A, VGS = - 4.5V Qg Qgs Qgd td(on) tr ... |
| Description |
20V P-Channel Enhancement Mode MOSFET
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| File Size |
166.14K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM7104DCS TSM7104D
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| OCR Text |
...n), Vgs @ - 4.5V, Ids @ - 2.3A =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m
Features
Advanced trench process technology High density...rl = 6, ID = - 1A, VGEN = - 4.5V, RG = 6 VDS = - 6V, VGS = 0V, f = 1.0MHz
BVDSS RDS(ON) RDS(ON) V... |
| Description |
20V Dual P-Channel Enhancement Mode MOSFET
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| File Size |
131.71K /
3 Page |
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Taiwan Semiconductor Compan...
Taiwan Semiconductor Company, Ltd
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| Part No. |
TSM2301CX TSM23011
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| OCR Text |
...(on), Vgs @ -4.5V, Ids @ -2.8A =130m RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190m
Features
Advanced trench process technology High density...rl = 6, ID = -1A, VGEN = -4.5V, RG = 6
VDS = -6V, V GS = 0V, f = 1.0MHz
Note : pulse test: pul... |
| Description |
20V P-Channel Enhancement Mode MOSFET
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| File Size |
191.37K /
6 Page |
View
it Online |
Download Datasheet |
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