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  1650v Datasheet PDF File

For 1650v Found Datasheets File :: 50    Search Time::1.11ms    
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    CM1200HG-66H09

Mitsubishi Electric Semiconductor
Part No. CM1200HG-66H09
OCR Text ...RACTERISTICS (TYPICAL) 20 VCE = 1650v, IC = 1200A Tj = 25C 15 3 2 GATE-EMITTER VOLTAGE (V) Cies 10 CAPACITANCE (nF) 102 7 5 3 2 5 0 101 7 5 3 2 Coes -5 Cres VGE = 0V, Tj = 25C f = 100kHz 23 5 7 100 23 ...
Description HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 93.51K  /  7 Page

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    Hitachi
Part No. MBN1200D33A
OCR Text ....0 4.5 TYPICAL [Conditions] VCC=1650v Lp100nH RG=3.3 VGE=15V Tc=125C Inductive Load 2.0 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage TYPICAL [Conditions] VGE=15V, RG=3.3 VCC=1650v, Lp100nH, Tc=125C...
Description Silicon N-Channel IGBT

File Size 94.75K  /  4 Page

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    CM400HG-66H

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM400HG-66H
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 1650v, IC = 400A, VGE = 15V, Tj = 25C IE = 400A, VGE = 0V, Tj = 25C (Note 4) IE = 400A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650v, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 16...
Description 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

File Size 59.66K  /  7 Page

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    RM1200HE-66S

Mitsubishi Electric Semiconductor
Part No. RM1200HE-66S
OCR Text ... CHARACTERISTICS (TYPICAL) VR = 1650v, Tj = 125C LS = 100nH 1.2 2000 REVERSE RECOVERY ENERGY Erec (J/p) Tj = 25C Tj = 125C 0 1 2 3 4 5 6 FORWARD CURRENT IF (A) 1.0 1500 0.8 1000 0.6 0.4 500 0.2 0 0 ...
Description HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

File Size 60.78K  /  4 Page

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    APTGT200A170D3

Advanced Power Technology
Part No. APTGT200A170D3
OCR Text ... APTGT200A170D3 - Rev 0 400A@1650v January, 2004 Continuous Collector Current TC = 25C TC = 80C TC = 25C Max ratings 1700 400 200 600 20 1250 Unit V A APTGT200A170D3 All ratings @ Tj = 25C unless otherwise specified E...
Description Phase Leg - IGBT
Phase leg Trench IGBT Power Module

File Size 193.89K  /  3 Page

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    APTGT200DA170D3

Advanced Power Technology
Part No. APTGT200DA170D3
OCR Text ...APTGT200DA170D3 - Rev 0 400A@1650v January, 2004 Continuous Collector Current TC = 25C TC = 80C TC = 25C Max ratings 1700 400 200 600 20 1250 Unit V APTGT200DA170D3 All ratings @ Tj = 25C unless otherwise specified El...
Description Boost Chopper - IGBT
Boost chopper Trench IGBT Power Module

File Size 193.56K  /  3 Page

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    Mitsubishi Electric
Part No. CM800E2C-66H
OCR Text ...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to cas...
Description 2nd-Version HVIGBT Modules

File Size 76.04K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM1200HB-66H
OCR Text ...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 1200A, VGE = 15V VCC = 1650v, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction t...
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules

File Size 54.25K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM800HB-66H
OCR Text ...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to case, IGBT part Junction to ca...
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules

File Size 50.54K  /  4 Page

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    Mitsubishi Electric
Part No. CM400HG-66H
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 1650v, IC = 400A, VGE = 15V, Tj = 25C IE = 400A, VGE = 0V, Tj = 25C (Note 4) IE = 400A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650v, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 16...
Description 3rd-Version HVIGBT Modules

File Size 84.66K  /  7 Page

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