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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
PHD3N20L
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OCR Text |
...Tmb / C
120
140
160
180
0.01 1us 10us 100us 1ms 10ms tp, pulse widtht (s)
Fig.1. Normalised power dissipation. PD% = 100PD...175 C
typ.
4
1
min.
2
0
0
0
1
2 3 4 VGS, Gate-source voltage (Volts)
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Description |
PowerMOS transistor Logic level FET 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
52.24K /
7 Page |
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it Online |
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Jianghai Europe GmbH
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Part No. |
CD281LL
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OCR Text |
... 100 2,521 0,46 0,92 235 5 x 15 180 1,401 0,30 0,60 290 6,3 x 11,5 220 1,146 0,20 0,40 400 6,3 x 15 330 0,764 0,17 0,34 488 8 x 11,5 470 0,5...175 5 x 11,5 82 2,589 0,46 0,92 235 5 x 15 120 1,769 0,30 0,60 290 6,3 x 11,5 180 1,180 0,20 0,40 40... |
Description |
Capacitor
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File Size |
1,025.75K /
5 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
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Part No. |
FST80100A
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OCR Text |
...037 dim. inches 3 c a minimum 1.180 .027 minimum millimeter 29.97 0.69 30.35 maximum 0.94 industry part number 83cnq100, a 83cnq080, a rrm 8...175 c instantaneous forward voltage - volts instantaneous forward current - amperes 1000 800 600 400... |
Description |
40 A, 100 V, SILICON, RECTIFIER DIODE
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File Size |
110.98K /
2 Page |
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it Online |
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Price and Availability
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