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For 1mil Found Datasheets File :: 88 Search Time::0.922ms
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					TriQuint Semiconductor
Part No.	TGF2023-02
OCR Text	... Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate For a median life of 2E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 3/ Channel operating temperature will directl...
Description	12 Watt Discrete Power GaN on SiC HEMT
File Size	217.58K / 7 Page	View it Online	Download Datasheet

					TriQuint Semiconductor
Part No.	TGF2023-05
OCR Text	... Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate For a median life of 2E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 3/ Channel operating temperature will directl...
Description	25 Watt Discrete Power GaN on SiC HEMT
File Size	215.94K / 7 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	5962R0053801QXC 5962R0053801V9A 5962R0053801VXC
OCR Text	...) Thickness: 483m 25.4m (19mils 1mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 4.0kA 1.0kA Silox Thickness: 12.0kA 4.0kA Top Metallization Top Metal 3: TiAlCu Thickness: 0.8m 0.02m Metal 1 ...
Description	Radiation Hardened Power-Up/Down Microprocessor Reset Circuit
File Size	120.26K / 2 Page	View it Online	Download Datasheet

					gigoptix
Part No.	IT3042D
OCR Text	... thick gold ribbon or a pair of 1mil diameter wires with lengths as short as practical allowing for appropriate stress relief (typically 400 +/- 100 m long). For all other connections, a single 1 mil dia wire of appropriate minimum length m...
Description	40 Gb/s high-sensitivity limiting amplifier
File Size	987.05K / 9 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	5962R9581304TXC HS9-303RH-T 5962R9581301TCC HS-303RH-T HS1-303RH-T
OCR Text	... x 279m 25.4m) 84 x 76 x 11mils 1mil METALLIZATION: Type: Al Thickness: 12.5kA 2kA SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSIS...
Description	Radiation Hardened CMOS Dual SPDT Analog Switch
File Size	25.43K / 2 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	CD4011BT CD4011BDTR 5962R9662101TXC 5962R9662101TCC CD4011BKTR
OCR Text	... x 533m 25.4m) 45 x 64 x 21mils 1mil METALLIZATION: Type: Al Thickness: 12.5kA 1.5kA SUBSTRATE POTENTIAL: Leave Floating or Tie to VDD Bond Pad #14 (VDD) First BACKSIDE FINISH: Silicon PASSIVATION: Type: Phosphorus Doped Silox (SiO2) Thickn...
Description	16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, CDIP14 CMOS Quad 2-Input NAND Gate
File Size	29.96K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation http://
Part No.	CD4504B 5962R9666501TXC CD4504BKTR CD4504BT CD4504BDTR 5962R9666501TEC
OCR Text	...x 533m 25.4m) 100 x 69 x 21mils 1mil METALLIZATION: Type: Al Thickness: 12.5kA 1.5kA SUBSTRATE POTENTIAL: Leave Floating or Tie to VDD Bond Pad #16 (VDD) First BACKSIDE FINISH: Silicon PASSIVATION: Type: Phosphorus Doped Silox (SiO2) Thickn...
Description	Dual Differential Comparator 8-SOIC -25 to 85 的CMOS六角电压电平转换为TTL到全CMOS或CMOS对CMOS运算 CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation
File Size	33.31K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	ISL72991RHF/PROTO ISL72991RHQF ISL72991RHVX ISL72991RHVF 5962F0250301QXC 5962F0250301V9A 5962F0250301VXC ISL72991 ISL72991RH ISL72991RHF
OCR Text	...Thickness: 483m 25.4m (19mils 1mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kA 1.0kA Top Metallization: Type: AlSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate, Dielec...
Description	CONNECTOR ACCESSORY 2.25 V-26 V ADJUSTABLE NEGATIVE LDO REGULATOR, 1 V DROPOUT, CDFP28 Radiation Hardened Negative Low Dropout Adjustable Voltage Regulator 2.25 V-26 V ADJUSTABLE NEGATIVE LDO REGULATOR, 1 V DROPOUT, CDFP28 Cabinet Rack Front Panel; External Height:15.75"; External Width:19"; Enclosure Color:White; Enclosure Material:Aluminum; Weight:3.62lb; Thickness:0.12" 辐射加固负低压差可调稳压 Regulator, Neg Voltage LDO, Rad-Hard, Adjustable -2.25V to -26V
File Size	205.07K / 3 Page	View it Online	Download Datasheet

					Intersil Corporation Intersil, Corp.
Part No.	CD4015BDTR CD4015BKTR CD4015BT 5962R9662401TXC 5962R9662401TEC
OCR Text	... x 533m 25.4m) 80 x 98 x 21mils 1mil METALLIZATION: Type: Al Thickness: 12.5kA 1.5kA SUBSTRATE POTENTIAL: Leave Floating or Tie to VDD; Bond Pad #16 (VDD) First BACKSIDE FINISH: Silicon PASSIVATION: Type: Phosphorus Doped Silox (SiO2) Thick...
Description	CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output(串行输入并行输出的CMOS 双四阶静态移位寄存器) CMOS级静态移位寄存器在串行输并行输出（串行输入并行输出的的CMOS双四阶静态移位寄存器 CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output 4000/14000/40000 SERIES, 4-BIT RIGHT SERIAL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, CDFP16
File Size	74.31K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	HS-1840ARH-T HS1-1840ARH-T HS9-1840ARH HS9-1840ARH-T
OCR Text	... 483m 25.4m) 111 x 161 x 19mils 1mil METALLIZATION: Type: Al Si Cu Thickness: 16.0kA 2kA SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 4.0kA 0.5kA Silox T...
Description	Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, CDFP28 Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection 辐射硬化的高16通道CMOS模拟多路复用器，模拟输入保护 Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, UUC26 Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28
File Size	65.83K / 3 Page	View it Online	Download Datasheet

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