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SEMIPOWER
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| Part No. |
4N60B
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| OCR Text |
...own voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 1.63 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v ... |
| Description |
N-channel I-PAK/D-PAK/TO-220F MOSFET
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| File Size |
925.31K /
7 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STT3418
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| OCR Text |
...hold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter con... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
130.74K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT3414
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| OCR Text |
...eshold voltage v ds =v gs ,i d =250ua v ds =24v , v gs =0v v gs =12v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter condition... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
116.16K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STA6968
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| OCR Text |
...oltage b v ds s = v g s 0v, i d 250ua = 60 v zero g ate voltage drain c urrent i ds s v ds 48v, v g s 0v = = 1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 10 ua on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds ... |
| Description |
S uper high dense cell design for low R DS (ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
114.71K /
6 Page |
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it Online |
Download Datasheet |
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Hi-Sincerity Mocroelect...
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| Part No. |
HU603AL
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 30 - - v i dss zero gate voltage drain current v ds =30v, v gs =0v - - 10 ua +i gss gate-body leakage ,forward v gs =20v, v ds =0v - - 100 na -i gss gate-body leakage ,reverse v gs =-20v, v ds =0v - - -... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
59.90K /
5 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STA6610
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| OCR Text |
...oltage b v ds s = v g s 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v g s 0v = = 1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 10 ua on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
115.79K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
4453
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| OCR Text |
...eakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-18a - - 20 m v gs =-4.5v, i d =-12a - - 36 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward tr... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
70.37K /
6 Page |
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it Online |
Download Datasheet |
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