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TY Semiconductor Co., Ltd
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| Part No. |
AOTF10T60P
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| OCR Text |
26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum case-t... |
| Description |
Trench Power AlphaMOS-II technology
|
| File Size |
966.74K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
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TY Semiconductor Co., Ltd
|
| Part No. |
AOT10T60P
|
| OCR Text |
26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum case-t... |
| Description |
Trench Power AlphaMOS-II technology
|
| File Size |
1,237.39K /
7 Page |
View
it Online |
Download Datasheet |
| |
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Guangdong Kexin Industrial ...
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| Part No. |
KDD2572
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| OCR Text |
... v gs = 10v, i d =9a q g(tot) = 26nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) qualified to aec q101 absolute maximum ratings ta = 25 parameter symbol rating unit drain to so... |
| Description |
N-Channel PowerTrench MOSFET
|
| File Size |
53.80K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
TY Semiconductor Co., Ltd
|
| Part No. |
KDD2572
|
| OCR Text |
... v gs = 10v, i d =9a q g(tot) = 26nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) qualified to aec q101 absolute maximum ratings ta = 25 parameter symbol rating unit drain to so... |
| Description |
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nc (Typ.), VGS = 10V
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| File Size |
166.43K /
2 Page |
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it Online |
Download Datasheet |
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