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2a 4a Datasheet PDF File

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				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SC4057
OCR Text	...Mfg.Co.Ltd Conditions IC = 0.2a At rated Voltage At rated Voltage VCE = 5V, IC = 4a VCE = 5V, IC = 1mA IC = 4a IB = 0.8A Junction to case VCE = 10V, IC = 0.8A IC = 4a IB1 = 0.8A, IB2 = 1.6A RL = 37.5, VBB2 = 4V Unit V mA mA V V /W ...
Description	Switching Power Transistor(8A NPN)
File Size	510.73K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP5N50U12
OCR Text	... ( typ.)@ v gs = 10v, i d = 2a ? low gate charge ( typ. 11nc) ? low c rss ( typ. 5pf) ? fast switching ? 100% avalanche tested ? improv...4a v gs = 10v (note 4, 5) -1115nc ...
Description	N-Channel MOSFET, FRFET 500V, 4a, 2.0Ω
File Size	381.29K / 10 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ459
OCR Text	...=--10V, ID=--1mA VDS=--10V, ID=-2a ID=--2a, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See ...4a, VGS=0 IS=--4a, di / dt=100A / s --2.0 1.2 2.4 2.0 1500 230 80 35 50 300 80 -1.5 150 195 2.8 Rati...
Description	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	32.07K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP04N70BI-A-HF14 AP04N70BI-A-HF-14
OCR Text	...on-resistance 3 v gs =10v, i d =2a - - 2.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ...4a - 16.7 - nc q gs gate-source charge v ds =480v - 4.1 - nc q gd gate-drain ("miller") charge v gs ...
Description	Fast Switching Characteristic
File Size	69.10K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ596 2SJ596TP-FA
OCR Text	...0V, ID=-4a ID=-4a, VGS=-10V ID=-2a, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=--8A VDS=...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-252VAR P-Channel Silicon MOSFET DC / DC Converter Applications
File Size	29.85K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ597
OCR Text	...=--10V, ID=--1mA VDS=--10V, ID=-2a ID=--2a, VGS=--10V ID=--1A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified T...4a VDS=--10V, VGS=--10V, ID=-4a VDS=--10V, VGS=--10V, ID=-4a IS=--4a, VGS=0 --1.0 2.3 3.2 300 400 27...
Description	P-Channel Silicon MOSFET DC / DC Converter Applications
File Size	30.93K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB04E12007
OCR Text	...1.4 1.6 1.8 2 v 2.4 v f 2a 4a 8a 2007-09-01 rev.2.2 page 5 idb04e120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 50 100 150 ...
Description	Fast Switching EmCon Diode
File Size	200.54K / 8 Page	View it Online	Download Datasheet

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