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Wuxi NCE Power Semicond...
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| Part No. |
NCE6007AS
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| OCR Text |
...0 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1.0 1.4 2.0 v v gs =10v, i d =7a 22 30 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =6a 27 35 m ? forward tra... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
403.39K /
7 Page |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE8205B
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| OCR Text |
...0 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.7 1.2 v v gs =4.5v, i d =4.5a - 15 22 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =3.5a - 19 27 m ? forward... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
336.45K /
7 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP2428GN3
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| OCR Text |
...a =25 continuous drain current 3 a i d @t a =70 continuous drain current 3 a i dm pulsed drain current 1 a p d @t a =25 total power dissipation 1.25 w linear derating factor 0.01 w/ t stg storage temperature range ... |
| Description |
Bottom Exposed DFN, Low On-resistance
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| File Size |
168.23K /
5 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSN1030D
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| OCR Text |
... na on characteristics (note 3) v gs(th) gate threshold voltage v ds =v gs ,i d =250 a 1.3 1.9 2.5 v r ds(on) drain-source on-state resistance v gs =10v, i d =10a - 27 31 m ? g fs forward transconductance v ds... |
| Description |
100V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
430.84K /
6 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207GE
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| OCR Text |
...o-ambient (note 2) r ja 83.3 /w msc0207ge 20v(d-s) dual n-channel enhancement mode power mos fet esd protected lead free pin configuration more semiconductor company limited http://www.moresemi.com ... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
359.32K /
6 Page |
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it Online |
Download Datasheet |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207SE
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| OCR Text |
... a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.55 0.7 0.95 v v gs =4.5v, i d =6.5a - 15 21 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =5.5a - 20 27... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
411.41K /
6 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207W
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| OCR Text |
...ximum power dissipation p d 3.0 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 42 /w -20v(d-s) dual p-chann... |
| Description |
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
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| File Size |
462.73K /
6 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTB30N06J3
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| OCR Text |
...05mh (note 2) e ar 3 mj total power dissipation @ t c =25 30 total power dissipation @ t c =100 pd 12 w operating junction and storage temp erature range tj, tstg -55~+150 c note : 1.... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
257.48K /
9 Page |
View
it Online |
Download Datasheet |
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