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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG40N60A4 FN4782
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| OCR Text |
...Features
* 100kHz Operation At 390V, 40A * 200kHz Operation At 390V, 20A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o * Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E C G... |
| Description |
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
From old datasheet system
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| File Size |
92.45K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG20N60A4D FN4790 HGTG20N60A4
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| OCR Text |
...eatures
* >100kHz Operation At 390V, 20A * 200kHz Operation At 390V, 12A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model... |
| Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
349.40K /
9 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP20N60A4 HGTG20N60A4 FN4781
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| OCR Text |
...eatures
* >100kHz Operation at 390V, 20A * 200kHz Operation at 390V, 12A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model... |
| Description |
600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
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| File Size |
352.12K /
9 Page |
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it Online |
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APEX
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| Part No. |
PA90
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| OCR Text |
...OGRAMMABLE POWER SUPPLIES UP TO 390V
TYPICAL APPLICATION
RF +VS
DESCRIPTION
The PA90 is a high voltage, low quiescent current MOSFET operational amplifier designed as a low cost solution for driving continuous output currents up to ... |
| Description |
High Voltage Power Op Amp
From old datasheet system
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| File Size |
54.59K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K1560G ISL9K1560G3
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| OCR Text |
...IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 15A, dIF/dt = 800A/s, VR = 390V, TC = 125C 25 35 29.4 3.5 57 90 2.0 5.0 275 52 1.36 13.5 390 800 30 40 A nC A/s A nC ns ns ns ns A nC ns
... |
| Description |
15A, 600V Stealth Dual Diode
15A 600V Stealth Dual Diode
15A, 600V Stealth⑩ Dual Diode
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| File Size |
117.30K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K3060G ISL9K3060G3 ISL9K3060G3NL
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| OCR Text |
...IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 390V, TC = 125C 27 36 36 2.9 55 110 1.9 6 450 60 1.25 21 730 800 35 45 A nC A/s A nC ns ns ns ns A nC ns
Ther... |
| Description |
30A, 600V Stealth?/a> Dual Diode
30A, 600V Stealth Dual Diode
30A, 600V Stealth??Dual Diode
30A 600V Stealth Dual Diode
30A, 600V Stealth⑩ Dual Diode
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| File Size |
114.35K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP3N60A4D HGT1S3N60A4DS FN4818
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| OCR Text |
...eatures
* >100kHz Operation At 390V, 3A * 200kHz Operation At 390V, 2.5A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model... |
| Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
129.16K /
10 Page |
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it Online |
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ST
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| Part No. |
STGW40NC6 STGW40NC60WD
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| OCR Text |
...25V, f = 1 MHz, VGE= 0
VCE = 390V, IC = 20A, VGE = 15V, (see Figure 16) Vclamp = 480V , Tj = 150C RG = 10, VGE= 15V
nC nC nC A
4/14
STGW40NC60WD
Electrical characteristics
Table 5.
Symbol td(on) tr (di/dt)on td(on) tr (di... |
| Description |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
Using the latest high voltage technology based on
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| File Size |
257.97K /
14 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL9R860S3STNL
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| OCR Text |
... IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, TC = 125C 18 21 28 3.2 50 77 3.7 3.4 150 53 2.5 6.5 195 500 25 30 A nC A/s A nC ns ns ns ns A nC ns
Therma... |
| Description |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
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| File Size |
98.14K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
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| Part No. |
ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD.-ISL9860PF2 R860PF2 ISL9R860PF2NL
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| OCR Text |
... IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, TC = 125C 18 21 28 3.2 50 77 3.7 3.4 150 53 2.5 6.5 195 500 25 30 A nC A/s A nC ns ns ns ns A nC ns
Therma... |
| Description |
8A, 600V Stealth⑩ Diode
8A 600V Stealth Diode
8A, 600V Stealth Diode 8A条，600V的隐形二极管
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| File Size |
113.22K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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