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80v 4a Datasheet PDF File

For 80v 4a Found Datasheets File :: 797 Search Time::1.063ms
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				International Rectifier
Part No.	IRHNJ3130
OCR Text	...ltage drain current 25 v ds = 80v, v gs =0v 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = ...4a q gs gate-to-source charge 10 nc v ds = 50v q gd gate-to-drain (miller) charge 20 t d (on) t...
Description	(IRHNJx130) N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
File Size	256.71K / 8 Page	View it Online	Download Datasheet

				SEMELAB LTD
Part No.	BDS10SMD05-QR-A
OCR Text	...re t j junction temperature 60v 80v 100v 60v 80v 100v 5v 15a 5a 43.75w ?65 to 200c 200c mechanical data dimensions in mm(inches) 16.5 (0.65)...4a v cc = 30v i b1 = 0.4a i c = 4a v cc = 30v i b1 = ?i b2 = 0.4a 0.7 1.0 0.8 s s s s...
Description	15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AA
File Size	37.86K / 2 Page	View it Online	Download Datasheet

				Harris Corporation
Part No.	IRF510 IRF511 IRF512 IRF513
OCR Text	80v and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect ...4a, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 5.6A, VDS = 0.8 ...
Description	4.9A, and 5.6A, 80v and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
File Size	67.70K / 7 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BDX85B BDX85C BDX85A
OCR Text	...(min)- bdx85; 60v(min)- bdx85a 80v(min)- bdx85b; 100v(min)- bdx85c complement to type bdx86/a/b/c applications designed for use i...4a; i b = 16ma b 2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 8a; i b = 40...
Description	isc Silicon NPN Darlington Power Transistor
File Size	52.01K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHY7130CM IRHY4130CM IRHY8130CM IRHY3130CM JANSF2N7380 JANSG2N7380 JANSH2N7380 JANSR2N7380
OCR Text	...0mA VDS > 15V, IDS = 9.1A VDS= 80v ,VGS=0V VDS = 80v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =14.4a VDS = 50V VDD = 50V, ID =14.4a VGS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source L...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
File Size	105.54K / 8 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	MJE802T
OCR Text	...ollector Cutoff Current VCE= 80v; IB= 0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain...4a ; VCE= 3V 100 isc Websitewww.iscsemi.cn ...
Description	Silicon NPN Darlington Power Transistor
File Size	213.11K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	MJE802
OCR Text	...ollector cutoff current v ce = 80v ; i b = 0 0.1 ma i cbo collector cutoff current v cb = 80v ; i e = 0 v cb = 80v ; i e = 0;t ...4a ; v ce = 3v 100 isc website www.iscsemi.cn ...
Description	isc Silicon NPN Darlington Power Transistor
File Size	76.08K / 2 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	MJE802T
OCR Text	...ollector cutoff current v ce = 80v ; i b = 0 0.1 ma i cbo collector cutoff current v cb = 80v ; i e = 0 v cb = 80v ; i e = 0;t ...4a ; v ce = 3v 100 isc website www.iscsemi.cn ...
Description	isc Silicon NPN Darlington Power Transistor
File Size	84.53K / 2 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB] Semelab(Magnatec) TT electronics Semelab Limited
Part No.	BDS12IG BDS10IG BDS11IG
OCR Text	...ature BDS10 60V 60V BDS11 80v 80v 5V 15A 5A 90W BDS12 100V 100V -65 TO 200C 200C Semelab plc. Telephone +44(0)1455 556565....4a VCC = 30V IB1 = 0.4a IC = 4a VCC = 30V IB1 = -IB2 = 0.4a Max. 0.7 1.0 0.8 Unit ms ms ms ...
Description	Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??)) SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
File Size	14.52K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9530NPBF
OCR Text	... gs = 0v CCC CCC -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse l...4a q gs gate-to-source charge CCC CCC 8.3 nc v ds = -80v q gd gate-to-drain ("miller") charge CCC C...
Description	HEXFET? Power MOSFET
File Size	116.95K / 9 Page	View it Online	Download Datasheet

For 80v 4a Found Datasheets File :: 797 Search Time::1.063ms
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