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90fbga Datasheet PDF File

For 90fbga Found Datasheets File :: 45 Search Time::1.578ms
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					Samsung semiconductor
Part No.	K4M51323LC-F
OCR Text	90fbga FEATURES * VDD/VDDQ = 2.5V/2.5V * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequent...
Description	Mobile-SDRAM
File Size	180.63K / 12 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233H-F1L K4S643233H-FE K4S643233H-FHE K4S643233H-G K4S643233H-N K4S643233H K4S643233H-L K4S643233H-HN600 K4S643233H-FG600 K4S643233H-HG1H0 K4S643233H-FE600
OCR Text	90fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description	2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 Mobile-SDRAM 移动SDRAM
File Size	138.79K / 12 Page	View it Online	Download Datasheet

					Samsung semiconductor
Part No.	K4S56323LF-FC
OCR Text	...32bit x 4 banks mobile sdram in 90fbga k4s56323lf - f(h)e/n/s/c/l/r may 2004 2 mobile-sdram bank select data input register 2m x 32 2m x 32 sense amp output buffer i/o control column decoder latency & burst length programming register ...
Description	2M x 32Bit x 4 Banks Mobile SDRAM
File Size	169.33K / 12 Page	View it Online	Download Datasheet

					SAMSUNG[Samsung semiconductor]
Part No.	K4M563233G K4M563233G-FN_G60 K4M563233G-FL_F60 K4M563233G-FHN_G60 K4M563233G-FN_GL K4M563233G-FHL_F60 K4M563233G-FHL_F75 K4M563233G-FHL_FL K4M563233G-FHN_G75 K4M563233G-FHN_GL K4M563233G-FL_F75 K4M563233G-FL_FL K4M563233G-FN_G75 K4M563233G-FN/G75 K4M563233G-FN/GL K4M563233G-FN/G60 K4M563233G-FL/FL K4M563233G-FL/F75 K4M563233G-FL/F60 K4M563233G-FHN/GL K4M563233G-FHN/G75 K4M563233G-FHN/G60 K4M563233G-FHL/FL K4M563233G-FHL/F75 K4M563233G-FHL/F60
OCR Text	90fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90fbga
File Size	139.94K / 12 Page	View it Online	Download Datasheet

					Elite Semiconductor Memory Technology, Inc. Samsung Semiconductor Co., Ltd.
Part No.	K4M28323PH-HG1L0 K4M28323PH-FE900 K4M28323PH-FE1L0 K4M28323PH-FC900
OCR Text	...32bit x 4 banks mobile sdram in 90fbga address configuration organization bank row column address 4m x 32 ba0, ba1 a0 - a11 a0 - a7 information in this document is provided in relation to samsung products, and is subjec t to change without...
Description	4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 ROHS COMPLIANT, FBGA-90 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
File Size	178.81K / 15 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4M28323LH K4M28323LH-FHN K4M28323LH-FHN_F K4M28323LH-FHN_F60 K4M28323LH-FHN_F75 K4M28323LH-FHN_F7L K4M28323LH-FN_F K4M28323LH-FN_F60 K4M28323LH-FN_F75 K4M28323LH-FN_F7L K4M28323LH-FN_G K4M28323LH-FN_L K4M28323LH-FN K4M28323LH-FHN_L K4M28323LH-FHN_G K4M28323LH-FHN/F7L K4M28323LH-FHN/F60 K4M28323LH-FHN/F75 K4M28323LH-FHN/G K4M28323LH-FHN/L K4M28323LH-FN/F K4M28323LH-FN/F60 K4M28323LH-FN/F75 K4M28323LH-FN/F7L K4M28323LH-FN/G K4M28323LH-FN/L
OCR Text	90fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description	1M x 32Bit x 4 Banks Mobile SDRAM in 90fbga
File Size	139.45K / 12 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF-N K4S56323LF-L K4S56323LF-FE K4S56323LF-C K4S56323LF-FR750
OCR Text	90fbga FEATURES * VDD/VDDQ = 2.5V/2.5V * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequent...
Description	8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 2M x 32Bit x 4 Banks Mobile SDRAM in 90fbga
File Size	138.71K / 12 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S563233F K4S563233FHN K4S563233FHN75
OCR Text	90fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90fbga
File Size	138.59K / 12 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF-FR60 K4S28323LF-HER75 K4S28323LF-NR1L K4S28323LF-FR750 K4S28323LF-FS750
OCR Text	90fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description	4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90fbga 100万x 32Bit的4银行0FBGA移动SDRAM
File Size	139.21K / 12 Page	View it Online	Download Datasheet

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