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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1B6416B6C
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| OCR Text |
...Range Current Consumption Clock async. Standby(Max) Standby(Max) Operating Freq.(Max) Speed(tAA) (ISB1, <40C) (ISB1, <85C) (ICC2, ICC3, Max....page Read Operation asynchronous Write Operation asynchronous Write Operation in Synchronous Mode Sy... |
| Description |
4Mx16 bit Synchronous burst Uni-Transistor Random Access Memory
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| File Size |
765.70K /
46 Page |
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it Online |
Download Datasheet
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MOTOROLA[Motorola, Inc]
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| Part No. |
MCM64AF32SG15 MCM64AF32
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| OCR Text |
...he Size and Functionality 256KB async 512KB async 256K burst 256K Pipe burst 512K burst 512K Pipe burst 512K 2-Bank burst
Module MCM64AF32 -- -- MCM72JG32 -- MCM72JG64 --
PD4 VSS VSS VSS VSS VSS VSS VSS
PD3 NC VSS NC NC VSS VSS VSS... |
| Description |
256K asynchronous Secondary Cache Module for Pentium
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| File Size |
190.21K /
12 Page |
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it Online |
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SPANSION[SPANSION]
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| Part No. |
S29WS512P S29WS256N S71WS512N S71WS512P
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| OCR Text |
...C=1.70 V to 1.95 V CL=30pF Max. async. Access (tACC) Max. async. page Access (tPACC) Max. Sync. burst Access (tBACC) Typ Single Word Programming Time Max (See Note) Typ Total 32-Words Buffer Programming Time Max (See Note) Typ Effective Wor... |
| Description |
Migrating from the S71WS512N to the S71WS512P
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| File Size |
320.69K /
18 Page |
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it Online |
Download Datasheet |
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MICRON[Micron Technology]
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| Part No. |
MT28F1284W18
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| OCR Text |
async/page/burst FLASH MEMORY
FLASH MEMORY
Features
Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm (FPA) for fast PROGRAM operation 16-word page Flexible 8Mb mul... |
| Description |
1.8V Low Voltage, Extended Temperature
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| File Size |
727.89K /
66 Page |
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it Online |
Download Datasheet |
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Price and Availability
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