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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
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Part No. |
MAX1920 MAX1921EUT MAX1921
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OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 60 x 41 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Copper/Silicon None .8 microns (as drawn) .8 microns (as drawn) 5 mil... |
Description |
PLASTIC ENCAPSULATED DEVICES
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File Size |
88.81K /
8 Page |
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it Online |
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Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products]
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Part No. |
MAX6816EUS
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OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 43 x 30 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 3 microns (as drawn) 3 microns (as drawn) 5 mil. Sq... |
Description |
PLASTIC ENCAPSULATED DEVICES
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File Size |
49.42K /
7 Page |
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it Online |
Download Datasheet |
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Microchip
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Part No. |
24C02SC 21170C
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OCR Text |
...lectrically Erasable PROMs with bondpad positions optimized for smart card applications. The devices are organized as a single block of 128 x 8-bit or 256 x 8-bit memory with a two-wire serial interface. The 24C01SC and 24C02SC also have pa... |
Description |
1K/2K 5.0V I 2 C ? Serial EEPROMs for Smart Cards From old datasheet system
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File Size |
101.09K /
12 Page |
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it Online |
Download Datasheet |
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Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products]
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Part No. |
MAX4649EKA
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OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 57 x 43 mils SiN/SiO (nitride/oxide) Aluminum/Si (Si = 1%) None 5 microns (as drawn) 5 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw
V.... |
Description |
PLASTIC ENCAPSULATED DEVICES
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File Size |
58.83K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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