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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML100W18
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| OCR Text |
...from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
1...3A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semela... |
| Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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| File Size |
25.75K /
2 Page |
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it Online |
Download Datasheet
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WEITRON[Weitron Technology]
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| Part No. |
WT6401
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| OCR Text |
...10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3 Operating Junction and Storage Temperatu...3A VGS=-2.5V,ID=-2.5A VGS=-1.8V,ID=-2.0A Forward Transconductance VDS=-5.0,ID=-4.0A RDS(on) 12 50 85... |
| Description |
P-Channel Enhancement Mode Power MOSFET
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| File Size |
699.67K /
6 Page |
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it Online |
Download Datasheet |
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GTM
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| Part No. |
G6401
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| OCR Text |
...uous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : ...3A VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-2.0A ID=-4.0A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A VGS=-10V RG=3... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
436.36K /
4 Page |
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it Online |
Download Datasheet |
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