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Advanced Power Technology Ltd.
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| Part No. |
APT10050LLC APT10050B2LC
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| OCR Text |
... Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current
1
Diode Forward Voltage
Reverse Recovery Time (IS = -ID[C... |
| Description |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
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| File Size |
68.29K /
2 Page |
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Silicon Laboratories Inc.
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| Part No. |
SI3200-FS SI3200-BS SI3200-GS SI3200-KS
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| OCR Text |
...ned, the selection of the Zener diode in Figure 1 or the Roffload resistors in Figure 2 is straightforward. The solutions presented are intended for applications in which a single battery supply is available, and it is desirable to derive a... |
| Description |
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| File Size |
76.40K /
8 Page |
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it Online |
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Infineon
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| Part No. |
BTS442-D2 BTS442-D2E3043 BTS442-D2E3062A
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| OCR Text |
...ected load. Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 14
1999-Mar.-22
BTS 442 D2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activate... |
| Description |
PROFET Smart High Side Power Switch
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| File Size |
202.52K /
14 Page |
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it Online |
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ST Microelectronics
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| Part No. |
BUZ11A
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| OCR Text |
...ISTICS (continued) SOURCE DRAIN DIODE
Symbol ISD I SDM V SD () t rr Q rr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge I SD = 60 A V GS = 0 85 0.19 I SD = 26 A... |
| Description |
N-CHANNEL 50V - 0.045 OHM - 26A TO-220 STRIPFET POWER MOSFET
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| File Size |
256.64K /
8 Page |
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it Online |
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Philips
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| Part No. |
PHB145NQ06T
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| OCR Text |
...ature - 55 +175 c source-drain diode i s source (diode forward) current (dc) t mb =25 c - 75 a i sm peak source (diode forward) current t mb =25 c; pulsed; t p 10 m s - 240 a avalanche ruggedness e ds(al)s non-repetitive drain-source av... |
| Description |
N-channel Trenchmos (tm) standard level FET
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| File Size |
76.47K /
12 Page |
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it Online |
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Roithner Lasertechnik
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| Part No. |
QL65D7SB
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| OCR Text |
Diode
2003 Rev 0
OVERVIEW
QL65D7SB is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5 mW for optoelectronic devices such as DVD-P/ROM.... |
| Description |
InGaAlP Laser Diode
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| File Size |
75.41K /
3 Page |
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it Online |
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California Eastern Laboratories
Duracell
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| Part No. |
PS9814-2-F3 PS9814-2-F3-A PS9814-1-F3-A PS9814-1-A PS9814-2-A PS9814-1-V-F3-A
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| OCR Text |
...hat use a GaAlAs light-emitting diode on the input side and a photodetector IC that includes a photodiode and a signal processor on the same chip on the output side. The PS9814-1, -2 are designed specifically for high common mode transient ... |
| Description |
HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP (SO-8) HIGH-SPEED OPTOCOUPLER
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 10 Mbps
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| File Size |
505.98K /
12 Page |
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it Online |
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