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  do-200 Datasheet PDF File

For do-200 Found Datasheets File :: 71014    Search Time::4.078ms    
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    BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text ...ithout further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Ele...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 36.12K  /  3 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...ts for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BUX41 ON0260

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BUX41 ON0260
OCR Text ...l. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown. 1 10 100 ...
Description 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS
From old datasheet system

File Size 122.51K  /  4 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ...in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6x2.0 deep (in both electrodes) Cathode tab Cathode O58.5 max O34 nom O1.5 Gate 27.0 25.4 O34 nom Anode Nominal weight: 250g Clamping force: 12.5kN 10% Lead length: 420mm Le...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ...in mm, unless stated otherwise. DO NOT SCALE. 2 holes fl3.6x2.0 deep (in both electrodes) Cathode tab Cathode fl58.5 max fl34 nom fl1.5 Gate 27.0 25.4 fl34 nom Nominal weight: 250g Clamping force: 12kN 10% Lead lenght: 420m...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6 x 2.0 deep (in both electrodes) Cathode O58.5 max O34 nom O34 nom Anode Nominal weight: 250g Clamping force: 12kN 10% Package outine type code: G Note: 1. Package maybe ...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text ...in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6 x 2.0 deep (in both electrodes) Cathode O58.5 max O34 nom O34 nom Anode Nominal weight: 250g Clamping force: 12kN 10% Package outine type code: G Note: 1. Package maybe ...
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    HI-8050 HI-8050PQI HI-8050PQT HI-8051PQT HI-8150 HI-8150PQI HI-8151PQT HI-8151PQI HI-8051 HI-8051PQI HI-8150PQT HI-8151

Holt Integrated Circuit...
HOLTIC[Holt Integrated Circuits]
Holt Integrated Circuits, Inc.
HOLT INTEGRATED CIRCUITS INC
Part No. HI-8050 HI-8050PQI HI-8050PQT HI-8051PQT HI-8150 HI-8150PQI HI-8151PQT HI-8151PQI HI-8051 HI-8051PQI HI-8150PQT HI-8151 HI-8150SERIES
OCR Text ...L CS DIN BPOUT CS CL LD DIN DO CS CL LD DIN DO CS CL LD DIN DO 1M 1F 1M 1F R BPIN BPOUT BPIN BPOUT BPOSC BPIN BPOUT BP...200 120 0.8 VDD 0.3 VDD VDD 0.6 VDD VDD 100 10 15 600 -3.0 -21 1.8 25 -21.5 V A A V V V V V V ...
Description XCR3256XL-10TQ144I
128 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN
128 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
CMOS High Voltage LCD Display Driver (30-38 Segments)
CAP METAL POLYPRO .62UF 630V 5% LIQUID CRYSTAL DISPLAY DRIVER, PQFP52
CMOS HIGH VOLTAGE DISPLAY DRIVER LIQUID CRYSTAL DISPLAY DRIVER, PQFP52

File Size 245.98K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...TSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Informa...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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