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TC9332 XXCFAM BFX48 3296Y501 G6R3ESS1 SMBJ150C AS5DC3 500797
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    MAXIM - Dallas Semiconductor
Part No. DS1270AB DS1270Y
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address input s must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi...
Description 16M NV SRAM

File Size 157.56K  /  8 Page

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    MAXIM - Dallas Semiconductor
Part No. DS1330W
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initia...
Description 3.3V 256K Nonvolatile SRAM with Battery Monitor

File Size 194.23K  /  12 Page

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    MAXIM - Dallas Semiconductor
Part No. DS1250Y DS1250AB
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address input s must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi...
Description 4096k NV SRAM

File Size 189.95K  /  11 Page

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    CXA1396D

Sony Corporation
Part No. CXA1396D
OCR Text ...396D is pin-compatible with the earlier model CX20116. They can replace the earlier models respectively, without any design changes, in most cases. Compared with the earlier models, these new models have been greatly improved in performance...
Description 8-bit 125 MSPS Flash A/D Converter

File Size 375.87K  /  22 Page

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    DS1249W DS1249W-150-IND DS1249W-100 DS1249W-100-IND DS1249W-150

Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
Part No. DS1249W DS1249W-150-IND DS1249W-100 DS1249W-100-IND DS1249W-150
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description 3.3V 2048kb Nonvolatile SRAM 3.3V2048kb非易失SRAM
CAPACITOR, CLASS Y2 33NFCAPACITOR, CLASS Y2 33NF; Capacitance:33nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op. 3.3 2048kb非易失SRAM
CAPACITOR, CLASS Y2 27NFCAPACITOR, CLASS Y2 27NF; Capacitance:27nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op.
CAPACITOR, CLASS Y2 330NFCAPACITOR, CLASS Y2 330NF; Capacitance:330nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op.
3.3V 2048k Nonvolatile SRAM

File Size 154.73K  /  8 Page

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    Maxim Integrated Products, Inc.
Part No. DS1270Y
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi- ...
Description 16M Nonvolatile SRAM(16M非易失性静态RAM) 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36

File Size 65.54K  /  8 Page

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    DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-7

DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Part No. DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-70IND
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description (DS1270AB/Y) 16M Nonvolatile SRAM

File Size 164.69K  /  8 Page

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    DS1270W

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
Part No. DS1270W
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description 3.3V 16Mb Nonvolatile SRAM

File Size 153.45K  /  8 Page

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    ICS9178-03 ICS9178Y-03

ICST[Integrated Circuit Systems]
Part No. ICS9178-03 ICS9178Y-03
OCR Text ...Skew, 2XPCLK to PCLK (2XPCLK is earlier than PCLK) (Note 1) Skew, 2XPCLK to REFCLK (2XPCLK is earlier) (Note 1) Skew, 2XPCLK to DCLK (Notes 1,3) SYMBOL Tjabs4 TEST CONDITIONS for 200 to 240 MHz on 2XPCLK at VDD 4.9 to 5.2V for 200 to 240 MH...
Description 245 MHz Clock Generator and Integrated Buffer for PowerPC™

File Size 490.53K  /  8 Page

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