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NXP Semiconductors N.V.
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| Part No. |
BUK6C1R5-40C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use in high-performance automotive applications. 1.2 featur... |
| Description |
N-channel TrenchMOS intermediate level FET 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
183.27K /
13 Page |
 View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BUK6E2R0-30C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
163.72K /
15 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK6E3R4-40C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
171.05K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK6213-30C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 47 A, 30 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
159.87K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK6218-40C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use in automotive critical applications. 1.2 features and be... |
| Description |
N-channel TrenchMOS intermediate level FET 42 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
184.87K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK6228-55C BUK6228-55C-15
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 31 A, 55 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
185.65K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK661R6-30C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
168.02K /
15 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK652R1-30C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
185.35K /
16 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK663R5-55C
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| OCR Text |
enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for use in high performance automotive applicatio... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
208.08K /
14 Page |
View
it Online |
Download Datasheet |
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