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For gate-pulsed Found Datasheets File :: 40477 Search Time::1.703ms
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				Rohm
Part No.	RUF020N02
OCR Text	...oltage drive (1.5V drive). (1) Gate (2) Source (3) Drain Abbreviated symbol : XK Applications Switching Inner circuit (3) Pack...Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 20 10 2 6 0.6...
Description	1.5V Drive Nch MOSFET
File Size	226.19K / 5 Page	View it Online	Download Datasheet

				Rohm
Part No.	RTF015N0309 RTF015N03TL
OCR Text	...oltage drive (2.5V drive). (1) Gate 0.3 (3) 1.7 (1) (2) 2.1 0~0.1 0.65 0.65 1.3 0.17 Applications Switching Pack...Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 30 12 1.5 6.0...
Description	2.5V Drive Nch MOSFET 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	154.91K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FX30KMJ-06 FX30KMJ-06-A8
OCR Text	...e name: TO-220FN) 3 1 1. Gate 2. Drain 3. Source 1 2 3 2 Applications Motor control, Lamp control, Solenoid control, ...Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissip...
Description	High-Speed Switching Use
File Size	168.73K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FX30KMJ-2 FX30KMJ-2-A8
OCR Text	...e name: TO-220FN) 3 1 1. Gate 2. Drain 3. Source 1 2 3 2 Applications Motor control, Lamp control, Solenoid control, ...Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissip...
Description	High-Speed Switching Use Pch Power MOS FET
File Size	168.83K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FX30KMJ-3 FX30KMJ-3-A8
OCR Text	...e name: TO-220FN) 3 1 1. Gate 2. Drain 3. Source 1 2 3 2 Applications Motor control, Lamp control, Solenoid control, ...Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissip...
Description	High-Speed Switching Use Pch Power MOS FET
File Size	168.21K / 7 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS13N50S
OCR Text	...anche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate...Pulsed (Note 1) 13* 8* 52* 30 Single Pulsed Avalanche Energy Avalanche Current Repetitive Ava...
Description	500V N-Channel MOSFET
File Size	826.74K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQU13N06TU FQD13N06 FQD13N06TF FQD13N06TM
OCR Text	... gs = 10 v, i d = 5.0 a ? low gate charge (typ. 5.8 nc) ? low crss (typ. 15 pf) ? 100% avalanche tested absolute maximum ratings ...pulsed (note 1) 40 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) ...
Description	N-Channel QFET MOSFET 60 V, 10 A, 140 m N-Channel QFET? MOSFET 60 V, 10 A, 140 mΩ N-Channel QFET MOSFET 60 V, 10 A, 140 m
File Size	829.10K / 8 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS50N06
OCR Text	...anche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate...Pulsed (Note 1) 30 21 120 25 Single Pulsed Avalanche Energy Avalanche Current Repetitive Aval...
Description	60V N-Channel MOSFET
File Size	979.63K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP18N20F FDPF18N20FT
OCR Text	...Typ.)@ VGS = 10V, ID = 9A * Low gate charge ( Typ. 20nC) * Low Crss ( Typ. 24pF) * Fast switching * 100% avalanche tested * Improve dv/dt ca...Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Powe...
Description	N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
File Size	681.81K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLA6H0912-500
OCR Text	...1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to fla...pulsed RF; f = 960 MHz to 1215 MHz; tp = 128 s; = 10 %; RF performance at VDS = 50 V; IDq = 100 mA;...
Description	LDMOS avionics radar power transistor
File Size	119.92K / 14 Page	View it Online	Download Datasheet

For gate-pulsed Found Datasheets File :: 40477 Search Time::1.703ms
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