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ST Microelectronics
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| Part No. |
STD150NH02L
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| OCR Text |
... v gs = 0 v 27 nc q gls (6) third-quadrant gate charge v ds < 0 v v gs = 10 v 64 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 75 a r g = 4.... |
| Description |
N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION
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| File Size |
185.86K /
9 Page |
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ST Microelectronics
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| Part No. |
STB70NH03L STB70NH03LT4
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| OCR Text |
... =5v 15.7 8.3 3.4 21 nc nc nc q gls (4) third-quadrant gate charge v ds < 0 v v gs = 10 v 15 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 30 a r g = 4... |
| Description |
N-CHANNEL 30V - 0.0075 OHM - 60A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION
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| File Size |
422.08K /
11 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB60NH02L
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| OCR Text |
...e conduction losses small q gls to reduce the gate charge losses small c oss to reduce losses due to output capacitance small q rr to reduce losses on sw 1 during its turn-on the c gd /c gs ratio lower than v th /v gg ... |
| Description |
N-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFET
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| File Size |
239.49K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB50NH02L
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| OCR Text |
...e conduction losses small q gls to reduce the gate charge losses small c oss to reduce losses due to output capacitance small q rr to reduce losses on sw 1 during its turn-on the c gd /c gs ratio lower than v th /v gg ... |
| Description |
N-CHANNEL 24V - 0.011 OHM - 50A D2PAK STRIPFET III POWER MOSFET
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| File Size |
413.92K /
11 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB130NH02LT4
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| OCR Text |
... v gs = 0 v 27 nc q gls (7) third-quadrant gate charge v ds < 0 v v gs = 10 v 64 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 45 a r g = 4.... |
| Description |
N-CHANNEL 24V - 0.0034 OHM - 120A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION
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| File Size |
409.41K /
11 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STB100NH02LT4
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| OCR Text |
...e conduction losses small q gls to reduce the gate charge losses small c oss to reduce losses due to output capacitance small q rr to reduce losses on sw 1 during its turn-on the c gd /c gs ratio lower than v th /v gg ... |
| Description |
N-CHANNEL 24V - 0.0052 OHM - 60A D2PAK STRIPFET III POWER MOSFET
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| File Size |
404.56K /
11 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
33981B
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| OCR Text |
... ocls sr gnd vpwr cboot out dls gls v dd m v pwr 33981
analog integrated circuit device data 2 freescale semiconductor 33981 internal block diagram internal block diagram figure 2. 33981 simplifi ed internal block diagram gnd out curr... |
| Description |
Single High-Side Switch (4.0 mз), PWM clock up to 60kHz
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| File Size |
1,013.06K /
37 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD90NH02L
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| OCR Text |
...v ds =16v, v gs =0v 18.8 nc q gls (3) 3. gate charge for synchronous operation third-quadrant gate charge v ds < 0v, v gs = 10v 44 nc r g gate input resistance f=1mhz gate dc bias =0 test signal level =20mv open drain 1 ?
std90nh0... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
478.45K /
16 Page |
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it Online |
Download Datasheet |
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