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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
AN3100
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| OCR Text |
...ucture Field Effect Transistor (hfet) The required biasing methods for the different circuit schemes are described in this application note.
GPA CIRCUIT DESIGN METHODS
Freescale's InGaP HBTs are designed using one of two different circu... |
| Description |
General Purpose Amplifier Biasing
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| File Size |
60.19K /
4 Page |
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WJ Communications
WJCI[WJ Communication. Inc.]
Electronic Theatre Controls, Inc.
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| Part No. |
FP31QF-PCB900 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140
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| OCR Text |
hfet
The Communications Edge TM Product Information
Product Features
* * * * * * * 50 - 4000 MHz 18 dB Gain @ 900 MHz +34 dBm P1dB +46 dBm Output IP3 High Drain Efficiency Pb-free 6mm 28-pin QFN package MTTF > 100 years
Product De... |
| Description |
2-Watt hfet 2瓦异质结场效应晶体管
12 AMP MINIATURE POWER RELAY 2瓦异质结场效应晶体管
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| File Size |
573.54K /
13 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SHF-0186
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| OCR Text |
hfet) housed in a low-cost surfacemount plastic package. The hfet technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-01... |
| Description |
0.05-12 GHz, 0.5 Watt GaAs hfet
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| File Size |
725.78K /
4 Page |
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STANFORD[Stanford Microdevices]
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| Part No. |
SHF-0198
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| OCR Text |
...tripline-mount ceramic package. hfet technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity. Output power at 1dB compression for the SHF-0198 is +27dBm when b... |
| Description |
DC-12 GHz, 0.5 Watt AIGaAs/GaAs hfet
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| File Size |
69.53K /
3 Page |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4112-EPU TGF4112
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| OCR Text |
hfet
4112
* * * * *
0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4112-EPU RF Per... |
| Description |
12 mm Discrete hfet
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| File Size |
153.36K /
9 Page |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4118-EPU TGF4118
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| OCR Text |
hfet
4118
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0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4118-EPU RF Perfo... |
| Description |
18 mm Discrete hfet
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| File Size |
151.94K /
9 Page |
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it Online |
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Price and Availability
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