| |
|
 |
AMI[AMI SEMICONDUCTOR]
|
| Part No. |
AMIS-720442-A AMIS-720442
|
| OCR Text |
...ng energies are components with high frequencies, they tend to integrate to a 0 value and the remainder adds a constant value to off-set the...energy directly on the image sensor of the A6 PCB that was lying flat at the bottom of box. The vide... |
| Description |
400dpi Contact Image Sensor
|
| File Size |
381.94K /
16 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TT electronics Semelab Limited
|
| Part No. |
BUL55B
|
| OCR Text |
...dvanced distributed base design high voltage high speed npn silicon power transistor ? semefab designed and diffused die ? high voltage ? fast switching ? high energy rating designed for use in electronic ballast applications features ? mu... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
| File Size |
19.55K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TT electronics Semelab Limited
|
| Part No. |
BUL53A
|
| OCR Text |
...dvanced distributed base design high voltage high speed npn silicon power transistor ? semefab designed and diffused die ? high voltage ? fast switching ? high energy rating designed for use in electronic ballast applications features ? mu... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
| File Size |
19.54K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SGS Thomson Microelectronics
|
| Part No. |
AN588
|
| OCR Text |
...5/30 ns waves) and present very high voltage peaks, around 15 kv. the component must assure an efficient protection in dynamic behavior. low...energy no matter the application. this is reflected in the standard iec801-5. 4) the choice and use ... |
| Description |
CHOOSING AN ITAXX REQUIRES A SYSTEM APPROACH
|
| File Size |
92.30K /
9 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|