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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	............................. 0.80 ID ............................................................................................ 7A Viso ................................................................................ 2000V q e TO-2...
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	GWM120-0075P3
OCR Text	... on chip level at VGS = 10 V; ID = 60 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 60 V; ID = 25 A VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 (diode) IF = 60 A; VGS= 0 V ...
Description	Six-Pack MOSFET Modules
File Size	106.98K / 3 Page	View it Online	Download Datasheet

				Sanyo Semiconductor Corporation
Part No.	FTD2003
OCR Text	... VIN PW=10S D.C.1% D VDD=10V D2 ID=2.2A RL=4.5 VOUT 6.4 4.5 S2 S2 G2 0.65 8765 3.0 0.95 0.425 unit VDSS VGSS ID IDP PD PT Tch Tstg 20 10 2.2 (8.8) 0.8 1.0 150 --55 to +150 min V(BR)DSS IDSS IGSS VGS(off) \| yfs \| RDS(on) 1 RDS(on) 2 Ciss ...
Description	N-Channel Silicon MOS FET
File Size	39.12K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	FR9024N
OCR Text	... -55V RDS(on) = 0.175 G S ID = -11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area. This benefit...
Description	Search --To IRFR9024N
File Size	151.56K / 10 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	FMP26-02P
OCR Text	...0.15 VGS= -10V, VDS = 0.5 VDSS, ID = -13A Resistive Switching Times VGS = -10V, VDS = 0.5 RG = 3.3 (External) VDSS, ID = -13A VGS = 0V, VDS = - 25 V, f = 1 MHz VGS = 0V, ID = - 250A VDS = VGS, ID = - 250A VGS = 20 V, VDS = 0V VDS = VDSS, VG...
Description	Polar P & N-Channel Power MOSFET Common Drain Topology
File Size	100.66K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	INA-01170
OCR Text	...Parameters and Test Conditions: Id = 35 mA, ZO = 50 Power Gain (\|S21\| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (\|S12\| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point...
Description	Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
File Size	43.00K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...owprofile applications. S ID = 84A D2Pak IRF1010ES TO-262 IRF1010EL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous D...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...S = 60V RDS(on) = 12m G S ID = 84A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...for lowprofile applications. ID = 85A D 2 P ak T O -26 2 IRF1010NS IRF1010NL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...S = 55V RDS(on) = 11m G S ID = 85A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

For i.d. Found Datasheets File :: 66273 Search Time::1.313ms
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