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MICROSEMI[Microsemi Corporation]
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Part No. |
APT8024LFLL APT8024B2FLL APT8024B2FLLG
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OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ... |
Description |
POWER MOS 7 FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
238.14K /
5 Page |
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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Part No. |
APT8024LLL APT8024B2LL APT8024B2LL_05 APT8024B2LL05
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OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
159.97K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
HUFA76429P3 HUFA76429S3S HUFA76429S3ST
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OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...31A, VGS = 5V (Figure 9) ID = 30A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J... |
Description |
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
205.01K /
10 Page |
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IRF[International Rectifier]
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Part No. |
IRHN57250SE
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OCR Text |
...0SE 100K Rads (Si) RDS(on) 0.06 ID 31A
IRHN57250SE 200V, N-CHANNEL
5
TECHNOLOGY
SMD-1
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been charac... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
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File Size |
173.24K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
FDP13AN06A FDP13AN06A0 FDB13AN06A0 FDB13AN06A0NL
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OCR Text |
...(ON) = 11.5m (Typ.), VGS = 10V, ID = 62A * Qg(tot) = 22nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Singl...31A, VGS = 6V ID = 62A, VGS = 10V, TJ = 175oC 2 0.022 0.026 4 0.034 0.030 V 0.0115 0.0135
Dynami... |
Description |
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m N-Channel PowerTrench MOSFET, 60V, 62A, 0.0135 Ohms 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз 62 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
236.21K /
11 Page |
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IRF[International Rectifier]
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Part No. |
IRG4BC40SPBF
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OCR Text |
...te d vo l ta g e
I
30
20 Id e a l d io de s
10
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. ...31A
10
I C = 16A
1.0 -60 -40 -20 0 20 40 60 80
0 25 50 75 100 125
A
150
A
100 120 ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
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File Size |
577.63K /
8 Page |
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International Rectifier
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Part No. |
AUIRFZ44Z AUIRFZ44ZS AUIRFZ44ZSTRL AUIRFZ44ZSTRR
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OCR Text |
...*
D
V(BR)DSS RDS(on) max. ID
D D
55V 13.9m 51A
G S
Description
Specifically designed for Automotive applications, this HEXF...31A VDS = VGS, ID = 250A VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS ... |
Description |
HEXFET庐 Power MOSFET HEXFET? Power MOSFET 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
328.09K /
14 Page |
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Price and Availability
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