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ONSEMI[ON Semiconductor]
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Part No. |
NID5003N_06 NID5003N NID5003NT4 NID5003N06
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OCR Text |
...tilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating ...ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
VDSS... |
Description |
Self−Protected FET with Temperature and Current Limit
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File Size |
121.15K /
6 Page |
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it Online |
Download Datasheet
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ONSEMI[ON Semiconductor]
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Part No. |
NIF62514_06 NIF62514 NIF62514T1 NIF62514T1G NIF62514T3G NIF6251406
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OCR Text |
...ilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating ...ESD) protection is provided by an integrated Gate-to-Source Clamp.
Features http://onsemi.com
6.... |
Description |
Self−protected FET with Temperature and Current Limit Self-protected FET with Temperature and Current Limit(自保护型FET(带过温和过流保护))
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File Size |
72.12K /
6 Page |
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it Online |
Download Datasheet
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PEREGRINE[Peregrine Semiconductor Corp.]
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Part No. |
PE4140G-06DFN PE4140 PE4140-06DFN
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OCR Text |
MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with differential signals at ...ESD) Precautions This MOSFET device has minimally protected inputs and is highly susceptible to ESD ... |
Description |
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Features
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File Size |
282.17K /
10 Page |
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it Online |
Download Datasheet
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Price and Availability
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