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  ms-026 Datasheet PDF File

For ms-026 Found Datasheets File :: 2510    Search Time::1.578ms    
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    SUM40N02-12P

Vishay Siliconix
Part No. SUM40N02-12P
OCR Text ...RM Qrr IF = 40 A, di/dt = 100 A/ms m IF = 40 A, VGS = 0 V 1.1 20 0.7 0.007 40 90 1.5 40 1.1 0.022 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, n...
Description N-Channel MOSFET

File Size 84.70K  /  5 Page

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    2SC4196

Hitachi Semiconductor
Part No. 2SC4196
OCR Text ...0 500 600 700 800 900 1000 Yie (mS) REAL 3.035 6.463 10.768 15.089 18.776 22.098 24.568 26.291 28.112 29.685 IMAG. 5.491 10.003 12.356 13.18...026 0.128 0.216 0.320 0.316 0.378 0.424 0.469 0.563 0.650 IMAG. 0.591 1.254 1.797 2.394 2.917 3.544 ...
Description Silicon NPN Transistor

File Size 59.38K  /  11 Page

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    NTD32N06L-D

ON Semiconductor
Part No. NTD32N06L-D
OCR Text ...inuous nonrepetitive (t p 10 ms) v gs v gs 15 20 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pul...026 0 50 4 20 2 1 v ds , draintosource voltage (volts) i d , drain current (amps) 0 v gs , gatetosou...
Description Power MOSFET 32 Amps, 60 Volts, Logic Level N-Channel DPAK

File Size 60.51K  /  8 Page

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    NTP45N06L-D

ON Semiconductor
Part No. NTP45N06L-D
OCR Text ...inuous nonrepetitive (t p 10 ms) v gs v gs 15 20 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pul...026 0.022 0.018 0.014 10 50 80 figure 3. onresistance vs. gatetosource voltage i d , drain current (...
Description Power MOSFET 45 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK

File Size 64.91K  /  8 Page

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    NTLTS3107PR2G NTLTS3107P05 NTLTS3107P NTLTS3107P-05

ONSEMI[ON Semiconductor]
Part No. NTLTS3107PR2G NTLTS3107P05 NTLTS3107P NTLTS3107P-05
OCR Text ...= 25C TA = 85C TA = 25C tp = 10 ms -5.9 -3.7 0.8 -25 -55 to 150 -1.6 260 W A C A C Drain Symbol RqJA RqJA RqJA Max 80 38 160 Unit C/W C/W C/...026 VGS = -4.5 V 0.022 TJ = 125C 0.018 TJ = 25C 0.014 TJ = -55C 0.01 0 5 10 15 20 -ID, DRAIN CURRENT...
Description Power MOSFET -20 V, -8.3 A, Single P-Channel,Micro8 Leadless Package

File Size 130.87K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. NTHS4101P07 NTHS4101PT1G NTHS4101P NTHS4101PT1
OCR Text ... Pulsed Drain Current - tp = 10 ms Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Con...026 2X 2X mm inches 0.457 0.018 0.66 0.026 mm inches Basic *For additional informati...
Description Power MOSFET -20 V, 6.7 A, P-Channel ChipFET-TM 4.8 A, 20 V, 0.034 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 55.81K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. NTHD4P02F05 NTHD4P02FT1G NTHD4P02F NTHD4P02FT1
OCR Text ...T CASE 1206A STYLE 3 tp = 10 ms Steady State tv5s TJ = 25C TJ = 85C TJ = 25C PIN CONNECTIONS 1 8 MARKING DIAGRAM 1 2 3 4 C3 M G 8...026 SCALE 20:1 mm inches 0.66 0.026 0.254 0.010 SCALE 20:1 mm inches Figure 18. Basic ...
Description Power MOSFET and Schottky Diode

File Size 80.25K  /  7 Page

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    NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G

ONSEMI[ON Semiconductor]
Part No. NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G
OCR Text ...tinuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 ms) Total Power Dis...026 VDS = 10 V 0.022 TJ = 100C 0.018 0.026 VGS = 15 V 0.022 0.018 TJ = 100C 0.014 TJ ...
Description Power MOSFET 60 Amps, 60 Volts
60 V, 60 A, N-Channel TO-220 and D2PAK
60 V, 60 A, N−Channel TO−220 and D2PAK
60 V / 60 A / N&Channel TO&220 and D2PAK

File Size 85.70K  /  10 Page

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    STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STE50DE100
OCR Text ...onditions VClamp = 800 V tp = 4 ms (see figure 15) VClamp = 800 V tp = 4 ms IB = 2.5 A (see figure 15) 1000 5.5 0.43 6 ms ns V V 0.65 10 ms ns Min. Typ. Max. Unit Maximum Collector-Source RG = 47 W hFE = 5 A IC = 35 A Voltage without Snu...
Description HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE

File Size 265.95K  /  9 Page

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    Vishay Intertechnology, Inc.
Part No. SQJ461EP-T1-GE3
OCR Text ...t (a) t c = 25 c single pulse 1 ms bvdss limited 100 s 10 ms limited by r * ds(on) i d limited i dm limited 100 ms, 1 s, 10 s, dc 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0....
Description 21.7 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

File Size 163.57K  /  9 Page

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