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TY Semiconductor Co., Ltd
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| Part No. |
SQ1470EH
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| OCR Text |
...nt (diode conduction) a i s 2.8 pulsed drain current b i dm 11 single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5 mj maximum power dissipation b t c = 25 c p d 3.3 w t c = 125 c 1.1 operating juncti... |
| Description |
Halogen-free According to IEC 61249-2-21
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| File Size |
141.55K /
2 Page |
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SSDI
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| Part No. |
SDR1306SMS
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| OCR Text |
... voltage drop (t a = 25oc, pulsed) i f = 3a sdr1304 - 1306 sdr1308 v f1 ?? 1.25 1.35 volts instantaneous forward voltage drop (t a = -55oc, pulsed) i f = 3a sdr1304 - 1306 sdr1308 v f2 ?? ... |
| Description |
(SDR1304SMS - SDR1308SMS) Ultra Fast Rectifier
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| File Size |
164.43K /
2 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRFW740BTMNL
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| OCR Text |
...00c) 6.3 a i dm drain current - pulsed (note 1) 40 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 450 mj i ar avalanche current (note 1) 10 a e ar repetitive avalanche energy (note 1) 13.4 mj dv/dt peak dio... |
| Description |
10 A, 400 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
706.44K /
11 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
IRF840BNL
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| OCR Text |
... 5.1 5.1 a i dm drain current - pulsed (note 1) 32 32 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 320 mj i ar avalanche current (note 1) 8.0 a e ar repetitive avalanche energy (note 1) 13.4 mj dv/dt peak... |
| Description |
500V N-Channel B-FET / Substitute of IRF840 & IRF840A
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| File Size |
921.11K /
10 Page |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW1N60D
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| OCR Text |
...6* a i dm drain current pulsed (note 1) 4 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 68 mj e... |
| Description |
N-channel I-PAK/TO-92 MOSFET
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| File Size |
624.94K /
6 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW1N55D
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| OCR Text |
...6* a i dm drain current pulsed (note 1) 4 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 81.9 mj ... |
| Description |
N-channel IPAK MOSFET
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| File Size |
500.82K /
5 Page |
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STMICROELECTRONICS
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| Part No. |
STW13NK100Z
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| OCR Text |
...e operating area drain current (pulsed) 52 a p tot total dissipation at t c = 25c 350 w derating factor 2.7 w/c v esd (g-s) gate source esd(hbm-c=100pf, r=1,5k ? ) 6000 v dv/dt (2) 2. i sd 8.3 a, di/dt 200a/s, v dd v (br)dss ,... |
| Description |
13 A, 1000 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
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| File Size |
293.60K /
14 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
SSP2N60BJ69Z
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| OCR Text |
....3 1.3 * a i dm drain current - pulsed (note 1) 6.0 6.0 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 120 mj i ar avalanche current (note 1) 2.0 a e ar repetitive avalanche energy (note 1) 5.4 mj dv/dt p... |
| Description |
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
855.14K /
10 Page |
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it Online |
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