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  punch Datasheet PDF File

For punch Found Datasheets File :: 2160    Search Time::5.735ms    
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    DYNEX[Dynex Semiconductor]
Part No. GP2400ESM18
OCR Text ... Thermal Cycling Capability Non punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 2400A 4800A APPLICATIONS s s s s External connecti...
Description Hi-Reliability Single Switch IGBT Module

File Size 155.57K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP2400ESM12
OCR Text ... - Channel Enhancement Mode Non punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Module s Isolated MMC Base with AlN s s G Aux E E1 E2 External connection E3 AP...
Description Powerline N-Channel Single Switch IGBT Module Preliminary Information

File Size 169.18K  /  12 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP201MHS18
OCR Text ... s s s s s Low VCE(SAT) Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s ...
Description Low VCE(SAT) Half Bridge IGBT Module

File Size 128.70K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP200MLS12
OCR Text ...d With Lower Arm Controlled Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Powe...
Description IGBT Chopper Module Preliminary Information

File Size 126.55K  /  10 Page

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    Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. GP200MKS12
OCR Text ...d With Upper Arm Controlled Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s High Powe...
Description IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT

File Size 126.08K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP200MHS18
OCR Text punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Con...
Description Half Bridge IGBT Module

File Size 135.14K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP200MHS12
OCR Text ... 2000 FEATURES s s s Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power ...
Description Half Bridge IGBT Module

File Size 98.36K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP1601FSS18
OCR Text ... s s s s s Low VCE(SAT) Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 1600A 3200A External connecti...
Description Single Switch Low VCE(SAT) IGBT Module

File Size 123.85K  /  9 Page

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    DYNEX[Dynex Semiconductor]
Part No. GP1600FSS18
OCR Text ...001 FEATURES s s s s Non punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1600A 3200A APPLICATIONS Ext...
Description Single Switch IGBT Module

File Size 126.53K  /  9 Page

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    Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. GP1600FSM18
OCR Text ...Capability 1600A Per Module Non punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1600A 3200A APPLICATIONS External connection s s s s High Reliabil...
Description Hi-Reliability Single Switch IGBT Module 1600 A, 1800 V, N-CHANNEL IGBT

File Size 126.66K  /  9 Page

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For punch Found Datasheets File :: 2160    Search Time::5.735ms    
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