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NEC Corp.
NEC[NEC]
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| Part No. |
2SB1669-Z 2SB1669 2SB1669-S
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| OCR Text |
...669 2SB1669-S 2SB1669-Z Package TO-220AB TO-262 to-220smd
FEATURES
* High DC current amplifier rate hFE 100 (VCE = -5.0 V, IC = -0.5 A) * Z type available for surface mounting supported prodcuts
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
... |
| Description |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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| File Size |
135.42K /
6 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
2SK3433-Z 2SK3433 2SK3433-S
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| OCR Text |
...433 2SK3433-S 2SK3433-Z PACKAGE TO-220AB TO-262 to-220smd
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
* Super low on-state resistance: RDS(on)1 = 26 m M... |
| Description |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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| File Size |
46.38K /
4 Page |
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it Online |
Download Datasheet |
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NEC[NEC]
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| Part No. |
2SK3480-ZJ 2SK3480 2SK3480-S 2SK3480-Z
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| OCR Text |
...-S 2SK3480-ZJ 2SK3480-Z PACKAGE TO-220AB TO-262 TO-263 to-220smdNote
FEATURES
* Super low on-state resistance: RDS(on)1 = 31 m MAX. (VGS...220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain t... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET
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| File Size |
76.01K /
8 Page |
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it Online |
Download Datasheet |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
2SK3573-ZK 2SK3573 2SK3573-S 2SK3573-Z
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| OCR Text |
...-S 2SK3573-ZK 2SK3573-Z PACKAGE TO-220AB TO-262 TO-263 to-220smd Note
FEATURES
* 4.5 V drive available * Low on-state resistance RDS(on)1 = 4.0 m MAX. (VGS = 10 V, ID = 42 A) * Low gate charge QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET 开N沟道功率MOSFET
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET
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| File Size |
75.97K /
8 Page |
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it Online |
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NEC, Corp.
NEC Corp.
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| Part No. |
2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ
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| OCR Text |
...03-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 to-220smd
Note
FEATURES
* Super low on-state resistance: RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) RDS(on)2 = 75 m MAX. (VGS = -4.0 V, ID = -13 A) * Low input capacitance: Cis... |
| Description |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
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| File Size |
82.75K /
8 Page |
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it Online |
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NEC, Corp.
NEC Corp.
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| Part No. |
2SJ605-S 2SJ605-ZJ 2SJ605-ZJ-AZ
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| OCR Text |
...05-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 to-220smdNote
FEATURES
* Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS...220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drai... |
| Description |
65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RonMAX=20m ohm TO-220AB,TO-262,TO-263
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| File Size |
86.08K /
8 Page |
View
it Online |
Download Datasheet |
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