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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR/U3303 IRFR3303TRL
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| OCR Text |
w i d = 33a ? parameter typ. max. units r q jc junction-to-case ??? 2.2 r q ja junction-to-ambient (pcb mount)** ??? 50 c/w r q ja junction...charge CCC CCC 29 i d = 18a q gs gate-to-source charge CCC CCC 7.3 nc v ds = 24v q gd gate-to-drai... |
| Description |
Ultra Low On-Resistance
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| File Size |
6,223.42K /
10 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR/U2905Z
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| OCR Text |
...@t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) si n gl e p u l se ...charge ??? 29 44 q gs gate-to-source charge ??? 7.7 ??? nc q gd gate-to-drain ("miller") charge ??? ... |
| Description |
Advanced Process Technology
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| File Size |
4,203.42K /
11 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR/U2407 IRFR2407TRL
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| OCR Text |
... c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 13...charge CCC 74 110 i d = 25a q gs gate-to-source charge CCC 13 19 nc v ds = 60v q gd gate-to-drain ... |
| Description |
HEXFET Power MOSFET
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| File Size |
3,706.62K /
10 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR/U2405 IRFR2405
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| OCR Text |
... c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 13...charge CCC 70 110 i d = 34a q gs gate-to-source charge CCC 16 23 nc v ds = 44v q gd gate-to-drain ... |
| Description |
Surface Mount (IRFR2405)
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| File Size |
1,542.07K /
8 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR3910
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| OCR Text |
w i d = 16a description 5/11/98 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 16 i d @ t c = 100c continuo...charge CCC CCC 44 i d = 9.0a q gs gate-to-source charge CCC CCC 6.2 nc v ds = 80v q gd gate-to-dra... |
| Description |
Ultra Low On-Resistance
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| File Size |
3,733.55K /
10 Page |
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TY Semiconductor Co., L...
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| Part No. |
wNM07N60F
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| OCR Text |
...sipation b t c =25 c p d 156 34 w derate above 25 c 1.24 0.27 w/ c operating and storage temperature range t j ,t stg - 55~150 c lead temper...charge q g(tot) v gs = 10 v, v ds = 480 v, i d = 3.5 a 17.8 nc threshold gate charge q g(th) 3.55 ga... |
| Description |
600V N-Channel MOSFET
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| File Size |
2,044.47K /
8 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR310 IRFR310TRL
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| OCR Text |
...er dissipation levels up to 1.5 w are possible in typical surface mount applications. note a. see device orientation. product summary v ds ...charge q g v gs = 10 v i d = 2.0 a, v ds = 320 v, see fig. 6 and 13 b, c --12 nc gate-sourc... |
| Description |
Power MOSFET
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| File Size |
3,900.13K /
7 Page |
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Taiwan Semiconductor Co...
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| Part No. |
TSM058N06PQ56 TSM058N06PQ56RLG
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| OCR Text |
...te 2) t c =25c p d 59.5 w t a =25c 2 storage temperature range t stg -55 to +150 c operating junction temperature range ...charge v ds = 30v, i d = 30a, v gs = 10v q g -- 118 -- nc gate-source charge q gs -... |
| Description |
60V N-Channel MOSFET
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| File Size |
628.25K /
6 Page |
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it Online |
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