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  write erase Datasheet PDF File

For write erase Found Datasheets File :: 12112    Search Time::1.641ms    
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    ST Microelectronics
Part No. M58WR064FB60ZB6F M58WR064FB70ZB6F M58WR064FB70ZB6T
OCR Text ...ers ? no delay between read and write operations block locking ? all blocks locked at power up ? any combination of blocks can be locked ?...erase cycles per block figure 1. package electronic signature ? manufacturer code: 20h ? device co...
Description 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

File Size 553.71K  /  87 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...Page Access : 50ns(Min.) * Fast write Cycle Time - Program time : 200s(Typ.) - Block erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/erase Lockout During Power Transitions * Reliable C...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...Page Access : 50ns(Min.) * Fast write Cycle Time - Program time : 200s(Typ.) - Block erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/erase Lockout During Power Transitions * Reliable C...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W

STMicroelectronics
Part No. M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W640DB70ZA1F M29W640DB70ZA1T M29W640DB70ZA6E M29W640DB70ZA6F M29W640DB70ZA6T M29W640DB90N1E M29W640DB90N1F M29W640DB90N1T M29W640DB90N6E M29W640DB90N6F M29W640DB90N6T M29W640DB90ZA1E M29W640DB90ZA1F M29W640DB90ZA1T M29W640DB90ZA6E M29W640DB90ZA6F M29W640DB90ZA6T M29W640DT M29W640DT70N1E M29W640DT70N1F M29W640DT70N1T M29W640DT70N6E M29W640DT70N6F M29W640DT70N6T M29W640DT70ZA1E M29W640DT70ZA1F M29W640DT70ZA1T M29W640DT70ZA6E M29W640DT70ZA6F M29W640DT70ZA6T M29W640DT90N1E M29W640DT90N1F M29W640DT90N1T M29W640DT90N6E M29W640DT90N6F M29W640DT90N6T M29W640DT90ZA1E M29W640DT90ZA1F M29W640DT90ZA1T M29W640DT90ZA6E M29W640DT90ZA6F M29W640DT90ZA6T
OCR Text ...VPP/WP Pin for FAST PROGRAM and write PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE - 64-bit Security Code EXTENDED MEMOR...erase CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W640DT: ...
Description 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

File Size 381.58K  /  50 Page

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    ST Microelectronics
Part No. M58LW128H115ZA1
OCR Text ...ns n programming time C 32 word write buffer C 12s word effective programming time n 128 uniform 64 kword memory blocks n block protection C...erase su spend n programmable wait signal n common flash interface n 100,000 program/erase cycles pe...
Description 128 MBIT(8MB X16, UNIFORM BLOCK, BURST) 3V SUPPLY FLASH MEMORY

File Size 518.46K  /  65 Page

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    DS42514

Advanced Micro Devices
Part No. DS42514
OCR Text ... advantages simultaneous read/write operations ? data can be continuously read from one bank while executing erase/program functions in other bank ? zero latency between read and write operations secured silicon (secsi) sector: extra ...
Description MCP Flash Memory and SRAM

File Size 446.30K  /  57 Page

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    24C01C 24C01C-EP 24C01C-ESN 24C01C-EST 24C01C-IP 24C01C-ISN 24C01C-IST 24C01C-P 24C01C-SN 24C01C-ST

MICROCHIP[Microchip Technology]
Part No. 24C01C 24C01C-EP 24C01C-ESN 24C01C-EST 24C01C-IP 24C01C-ISN 24C01C-IST 24C01C-P 24C01C-SN 24C01C-ST
OCR Text ...nd 400 kHz compatibility * Page-write buffer for up to 16 bytes * Self-timed write cycle (including auto-erase) * Fast 1 mS write cycle time for byte or page mode * Address lines allow up to eight devices on bus * 1,000,000 erase/write cycl...
Description 1K 5.0V I 2 C ⑩ Serial EEPROM
1K 5.0V I 2 C Serial EEPROM

File Size 94.39K  /  12 Page

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    AT91SAM7SE256 AT91SAM7SE512

ATMEL Corporation
Part No. AT91SAM7SE256 AT91SAM7SE512
OCR Text ...elect lines output low nwr[1:0] write signals output low nrd read signal output low nwe write enable output low nub nub: upper byte select o...erase 107 pa31 12 pa17/pgmd5/ad0 44 pb20 76 tck 108 pa30 13 pa16/pgmd4 45 gnd 77 tms 109 pa29 14 pa1...
Description (AT91SAM7SExxx) Flash microcontroller

File Size 723.25K  /  47 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29LV320MH101EF AM29LV320MH112EI AM29LV320ML112EI AM29LV320ML90RPCF
OCR Text ...lash, and superior inadvertent write protection minimum 100,000 erase cycle guarantee per sector 20-year data retention at 125 c performance characteristics high performance ? 90 ns access time ? 25 ns page read times ? 0.5 s typical ...
Description 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 2M X 16 FLASH 3V PROM, 100 ns, PDSO56
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PBGA64

File Size 722.40K  /  59 Page

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For write erase Found Datasheets File :: 12112    Search Time::1.641ms    
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