|
|
 |
IRF[International Rectifier]
|
Part No. |
IRFPS38N60 IRFPS38N60L
|
OCR Text |
... Power Supplies 120m 600V 170ns 38A * Motor Control applications Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced... |
Description |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package SMPS MOSFET
|
File Size |
163.43K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
STP45NF06
|
OCR Text |
...nf06 n-channel 60v - 0.022 w - 38a to-220 stripfet? power mosfet (1) i sd 38a, di/dt 300a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.022 w n exceptional dv/dt capability description this power mosfet is the latest... |
Description |
N-Channel POWER MOSFET
|
File Size |
230.89K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ADPOW[Advanced Power Technology]
|
Part No. |
APT30M36JLL_04 APT30M36JLL APT30M36JLL04
|
OCR Text |
...500 100 3 5
(VGS = 10V, ID = 38A)
Ohms A nA Volts
7-2004 050-7152 Rev B
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
Description |
POWER MOS 7 R MOSFET
|
File Size |
166.73K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ADPOW[Advanced Power Technology]
|
Part No. |
APT30M36JFLL
|
OCR Text |
...000 100 3 5
(VGS = 10V, ID = 38A)
Ohms A nA Volts
7-2004 050-7158 Rev B
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
Description |
POWER MOS 7 FREDFET
|
File Size |
167.31K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |

Microsemi Corporation ADPOW[Advanced Power Technology] Microsemi, Corp.
|
Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
|
OCR Text |
38A 0.260
POWER MOS 7
(R)
R
MOSFET
TO-264 Max
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by sig... |
Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
File Size |
100.91K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
Part No. |
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
|
OCR Text |
38A 0.260
POWER MOS 7
(R)
R
FREDFET
TO-264 Max
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by si... |
Description |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
File Size |
101.61K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Advanced Power Technology, Ltd. Microsemi, Corp. ADPOW[Advanced Power Technology]
|
Part No. |
APT10026JLL_03 APT10026JLL APT10026JLL03
|
OCR Text |
...1 MHz VGS = 10V VDD = 500V ID = 38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 38A, RG = ... |
Description |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
File Size |
107.27K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|