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天津环球磁卡股份有限公司
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| Part No. |
MPSA56-AP MPSA55-AP
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| OCR Text |
...ility Classification Rating 94V-0 and MSL Rating 1
PNP Silicon Amplifier Transistor
TO-92
A E
Marking:MPSA55,MPSA56
Maximum Ratings
Symbol V CEO V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base... |
| Description |
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| File Size |
169.07K /
2 Page |
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M.S. Kennedy, Corp.
M.S. Kennedy Corp.
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| Part No. |
MSK1461 MSK1461B
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| OCR Text |
...l =33 w a v =-5v/v t j <175c 0.1% 10v step v out =10v r l =1k w a v =-5v/v r l =1k w f=100hz f=100khz static supply voltage range...5watts 2.) for conservative design, set t j =+125c. 3.) for this example, worst case t a =+50c 4.)... |
| Description |
High Speed/Voltage Op Amp(FET输入，高电压高速运算放大器) OP-AMP, 8000 uV OFFSET-MAX, 1200 MHz BAND WIDTH, DFM14
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| File Size |
301.86K /
5 Page |
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天津环球磁卡股份有限公司
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| Part No. |
MPSA13-A MPSA13-AP MPSA14-A MPSA14-AP
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| OCR Text |
...5 o c derate above 25 o c 625 5.0 mw mw/ o c p d total device dissipation @t a =25 o c derate above 25 o c 1.5 12 w mw/ o c t j junction temperature -55 to +150 o c t stg storage temperature -55 to +150 o c electrical characteristics @ 25 o... |
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| File Size |
249.83K /
5 Page |
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it Online |
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Cree Research
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| Part No. |
PFM18030
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| OCR Text |
...mpression at pout =30 watts - 0.8 1.5 db pulsed cw compression measurement (12 sec pulse, 120 sec period, 10% duty cycle). 4 gain...5watts average; is-95a pr otocol: is95 forward link pps+ 9ch. acpr conditions: a) 900 khz offset,... |
| Description |
2-Stage Power Module Enhancement-Mode Lateral MOSFETs
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| File Size |
334.11K /
13 Page |
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MCC
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| Part No. |
MJE13003
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| OCR Text |
...n voltage (i c =10madc, i b =0) 400 vdc v (br)cbo collector- base breakdown voltage (i c =1000uadc, i e =0) 700 vdc v (br)ebo emitter- base breakdown voltage (i e =1000 uadc, i c =0) 9.0 vdc i cbo collector cutoff current ... |
| Description |
NPN Silicon Plastic-Encapsulate Transistor
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| File Size |
280.04K /
3 Page |
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it Online |
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