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  1.9ghz Datasheet PDF File

For 1.9ghz Found Datasheets File :: 815    Search Time::7.219ms    
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    MRFIC1801

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRFIC1801
OCR Text 1.8 GHz Antenna Switch Designed primarily for use in DECT, Japan Personal Handy System (PHS), other wireless Personal Communication Systems...9GHz 20 15 10 5 Antenna Port in RX Mode 2.3 2.4 2.5 Pin, INPUT POWER (dBm) f, FREQUEN...
Description 1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

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    MRFIC1803

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRFIC1803
OCR Text 1.8 GHz Upconverter Designed primarily for use in DECT, Japan's Personal Handy System (PHS), and other wireless Personal Communication Syst...9GHz PIF = -20dBm fIF = 110MHz TA = 25C VDD = 3.0 Vdc 2.7 Vdc 12 -35C 14 10 TA = 25C 85C 8 ...
Description 1.8 GHz UPMIXER, EXCITER AND LO AMP GaAs MONOLITHIC INTEGRATED CIRCUIT

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...d amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ...d amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...elecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA * CECC-type available: CECC 50 002/259 ESD: Electrostati...9GHz VCE = Parameter 14 10V 5V dB 3V 2V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Paramet...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ... 1mA to 20mA * fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2
OCR Text 1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High Linearity and P1dB * Low Noise Fig...9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz an...
Description Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

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    BFR280 Q62702-F1298

http://
SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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For 1.9ghz Found Datasheets File :: 815    Search Time::7.219ms    
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