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10s Datasheet PDF File

For 10s Found Datasheets File :: 27826 Search Time::1.125ms
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				Intersil Corporation
Part No.	IRF730 FN1580
OCR Text	...t 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute M...
Description	BEAD,FERRITE,1000 OHMS, /-25%,100MA,0603 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET From old datasheet system
File Size	53.67K / 7 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	IRF9510 FN2214
OCR Text	...t 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: ...
Description	From old datasheet system 3.0A, 100V, 1.200 Ohm, P-Channel Power　MOSFET 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
File Size	58.92K / 7 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maixm
Part No.	MAX1730
OCR Text	...d Temperature Range (soldering, 10s)......................+300C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device...
Description	50mA, Regulated, Step-Down Charge Pump for 1.8V or 1.9V Logic 50mA Regulated Step-Down Charge Pump for 1.8V or 1.9V Logic
File Size	176.17K / 8 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE56033
OCR Text	.... 800A2s Peak Gate Current (t = 10s, Note 1), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak Gate Voltage (t = 10s, Note 1), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	TRIAC, 45 Amp
File Size	19.37K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RFM3N45 RFP3N45 RFP3N50 RFM3N50
OCR Text	...t 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This ...
Description	3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs
File Size	81.37K / 10 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SCG4153 SCG4153-15
OCR Text	...ed) rating parameter symbol 10s steady state unit drain C source voltage v ds 20 v gate C source voltage v gs 6 v t a = 25c 0.88 0.8 continuous drain current 1 t a = 70c i d 0.71 0.64 a t a = 25c 0.37 0.3 po...
Description	N-Channel Enhancement Mode MOSFET
File Size	678.51K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FM809 FM809_810
OCR Text	...ge Lead Temperature (soldering, 10s) 100V/s 320mW -40C to +105C -65C to +150C +300C These are stress ratings only, and functional operation is not implied for these levels or beyond. Exposure to Absolute Maximum Rating conditions for ...
Description	3-Pin µC Supervisor Circuits From old datasheet system
File Size	51.62K / 8 Page	View it Online	Download Datasheet

				hitachi
Part No.	HAT2024R
OCR Text	... A A A W W C C Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical...
Description	Silicon N Channel Power MOS FET High Speed Power Switching From old datasheet system
File Size	122.18K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW40T120 Q67040-S4519 GW40T120
OCR Text	... Short circuit withstand time - 10s Designed for : G E - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature s...
Description	From old datasheet system Low Loss IGBT in Trench and Fieldstop technology IGBTs & DuoPacks - 40A 1200V TO247 IGBT
File Size	407.11K / 12 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
Part No.	IRF720
OCR Text	...t 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTIO...
Description	30V N-Channel PowerTrench MOSFET 3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
File Size	55.34K / 7 Page	View it Online	Download Datasheet

For 10s Found Datasheets File :: 27826 Search Time::1.125ms
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