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33UR22D1 12F80B NCDMA 2SA1069A M4744 TE4933 TDA9503 FND367C
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  12.000001 Datasheet PDF File

For 12.000001 Found Datasheets File :: 934    Search Time::1.625ms    
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    29LV800BB-90 29LV800BB-70 MX29LV800BTXBC-90G MX29LV800BTXBI-70G MX29LV800BTXBI-90G 29LV800BT-90 MX29LV800BTTC-90 MX29LV8

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Macronix International
Part No. 29LV800BB-90 29LV800BB-70 MX29LV800BTXBC-90G MX29LV800BTXBI-70G MX29LV800BTXBI-90G 29LV800BT-90 MX29LV800BTTC-90 MX29LV800BTTC-70 MX29LV800BTTC-90G
OCR Text ...ce#oe#gnd 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 ry/by# a1...000001 0 sa2 8kbytes 4kwords 06000h-07fffh 03000h-03fffh 000001 1 sa3 32kbytes 16kwords 08000h-0ffff...
Description 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 759.52K  /  63 Page

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    AOT22N50 AOTF22N50

Alpha & Omega Semiconductors
Part No. AOT22N50 AOTF22N50
OCR Text ... 69 83 nc q gs 17 22 27 nc q gd 12 24 36 nc t d(on) 60 ns t r 122 ns t d(off) 124 ns v drain-source breakdown voltage i d =250 a, v gs =0v,...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse...
Description 500V,22A N-Channel MOSFET

File Size 531.42K  /  6 Page

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    30H80CT

ON Semiconductor
Part No. 30H80CT
OCR Text ... voltage, t j = 25 c) i r ? ? 12 0.017 35 0.250 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information ...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description Search --To MBR30H80CT

File Size 124.65K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT20N60
OCR Text ...nction-to-ambient a,d c 20 20* 12* 12 65 65 p d v 30 gate-source voltage v/ns mj t c =100c a 80 pulsed drain current c v units parameter d...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance puls...
Description 600V,20A N-Channel MOSFET

File Size 599.74K  /  6 Page

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    Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
Part No. MX29LV002CBQI-90 MX29LV002CBQI-70 MX29LV002CBTI-90 MX29LV002CBQC-70 MX29LV002CTQC-90 MX29LV002CTTI-90 MX29LV004CTQI-70 MX29LV002CTQC-70 MX29LV004CTTC-55R MX29LV002CTQI-70 MX29LV002NCTQI-70 MX29LV004CBTI-70 MX29LV008CBTI-55R MX29LV004CBTI-55R
OCR Text ...6 a5 a4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 oe# a10 ce# q7 q6 q5 q4 q3 gnd q2 q1 q0 a0 a1 a2 a3 32 31 30 29 28 27 26 25 24 23 22 21 20 19...000001 0 sa2 8kbytes 06000h-07fffh 000001 1 sa3 32kbytes 08000h-0ffffh 00001x x sa4 64kbytes 10000h-...
Description 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
1M X 8 FLASH 3V PROM, 55 ns, PDSO40

File Size 1,229.08K  /  67 Page

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    SBRS8130LT3G

ON Semiconductor
Part No. SBRS8130LT3G
OCR Text ...ance, junction ? to ? lead jl 12 ? c/w thermal resistance, junction ? to ? ambient (t a = 25 ? c, min pad, 1 oz copper) junction ? to ? a...000001 0.1 100 10 1 0.01 0.00001 effective transient thermal resistance figure 9. thermal response, ...
Description Schottky Power Rectifier
   Schottky Power Rectifier

File Size 139.12K  /  5 Page

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    MBR30H100CTG

ON Semiconductor
Part No. MBR30H100CTG
OCR Text ...st conditions in figures 11 and 12) w aval 200 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding max...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 67.78K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4476A
OCR Text ...in-source voltage 30 v a i d 15 12 110 mj avalanche current c 36 a 27 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh ...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description 30V N-Channel MOSFET

File Size 449.49K  /  6 Page

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    MBRB30H60CT-1G10 MBRB30H60CTT4G

ON Semiconductor
Part No. MBRB30H60CT-1G10 MBRB30H60CTT4G
OCR Text ...st conditions in figures 11 and 12) w aval 350 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristic...000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), tr...
Description SWITCHMODE?/a> Power Rectifier

File Size 149.75K  /  9 Page

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    AO4476A

Alpha & Omega Semiconductors
Part No. AO4476A
OCR Text ...in-source voltage 30 v a i d 15 12 110 mj avalanche current c 36 a 27 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh ...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description 30V N-Channel MOSFET

File Size 362.55K  /  6 Page

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