|
|
 |
CET[Chino-Excel Technology]
|
Part No. |
CEU3700 CED3700
|
OCR Text |
130m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac...rl VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
|
File Size |
202.17K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
HITACHI[Hitachi Semiconductor]
|
Part No. |
2SK3214
|
OCR Text |
...ures
* Low on-resistance R DS =130m typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
TO-220AB
...rl = 6 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to ... |
Description |
Silicon N Channel MOS FET High Speed Power Switching
|
File Size |
26.50K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas
|
Part No. |
2SK3214
|
OCR Text |
...res
* Low on-resistance R DS = 130m typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
TO-220AB
...rl = 6
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance ... |
Description |
Transistors>Switching/MOSFETs
|
File Size |
50.32K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|